參數(shù)資料
型號： TE28F016B3TA90
廠商： INTEL CORP
元件分類： DRAM
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO40
封裝： 12 X 20 MM, TSOP-40
文件頁數(shù)： 25/48頁
文件大小： 304K
代理商： TE28F016B3TA90
E
4.4
SMART 3 ADVANCED BOOT BLOCK
25
PRELIMINARY
DC Characteristics
(1)
V
CC
2.7 V
–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V
V
CCQ
2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V
Sym
I
LI
Parameter
Input Load Current
Note Typ
6
Max
±
1
Typ
Max
±
1
Typ
Max
±
1
Unit
μA
Test Conditions
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
CE# = RP# = V
CC
or during Program/
Erase Suspend
I
LO
Output Leakage
Current
6
±
10
±
10
±
10
μA
I
CCS
V
CC
Standby Current
6
18
35
20
50
150
250
μA
I
CCD
V
CC
Power-Down
Current
6
7
20
7
20
7
20
μA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
RP# = GND ± 0.2 V
I
CCR
V
CC
Read Current
4,6
10
18
8
15
9
15
mA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
OE# = V
IH
, CE# =V
IL
f = 5 MHz, I
OUT
=0mA
Inputs = V
IL
or V
IH
RP# = GND ± 0.2 V
V
PP
≤
V
CC
V
PP
≤
V
CC
V
PP
> V
CC
V
PP
=V
PP1, 2, 3
Program in Progress
I
PPD
V
PP
Deep Power-
Down Current
0.2
5
0.2
5
0.2
5
μA
I
PPR
V
PP
Read Current
2
±
15
200
2
±
15
200
2
±
15
200
μA
3
50
50
50
μA
I
CCW+
I
PPW
V
CC
+ V
PP
Program
Current
3,6
18
55
18
55
18
55
mA
10
30
10
30
10
30
mA
V
PP
= V
PP4
Program in Progress
I
CCE
+
I
PPE
V
CC
+ V
PP
Erase
Current
3,6
20
45
21
45
21
45
mA
V
PP
= V
PP1, 2, 3
Program in Progress
16
45
16
45
16
45
mA
V
PP
= V
PP4
Program in Progress
I
PPES
I
PPWS
V
PP
Erase Suspend
Current
3
50
200
50
200
50
200
μA
V
PP
= V
PP1, 2, 3, 4
Program or Erase
Suspend in Progress
相關(guān)PDF資料
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TE28F032B3T90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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TE28F016C3T110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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