參數(shù)資料
型號(hào): TE28F016B3T90
廠商: INTEL CORP
元件分類: DRAM
英文描述: SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
封裝: 10 X 20 MM, TSOP-40
文件頁(yè)數(shù): 7/48頁(yè)
文件大?。?/td> 304K
代理商: TE28F016B3T90
E
SMART 3 ADVANCED BOOT BLOCK
7
PRELIMINARY
A
GND
A
20
A
19
A
10
DQ
7
DQ
6
DQ
5
DQ
4
V
CCQ
V
CC
NC
DQ
3
DQ
2
DQ
1
DQ
0
OE#
GND
CE#
A
0
A
16
A
15
A
14
A
13
A
12
A
11
A
9
A
WE#
RP#
V
WP#
A
18
A
7
A
6
A
5
A
4
A
3
A
2
A
1
16 M
8 M
Advanced Boot Block
40-Lead TSOP
10 mm x 20 mm
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
0580_01
NOTES:
1.
2.
40-Lead TSOP available for 8- and 16-Mbit densities only.
Lower densities will have NC on the upper address pins. For example, an 8-Mbit device will have NC on Pin 38.
Figure 1. 40-Lead TSOP Package for x8 Configurations
Advanced Boot Block
48-Lead TSOP
12 mm x 20 mm
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A
16
V
GND
DQ
15
DQ
7
DQ
14
DQ
6
DQ
13
DQ
5
DQ
12
DQ
4
V
CC
DQ
11
DQ
3
DQ
10
DQ
2
DQ
9
DQ
1
DQ
8
DQ
0
OE#
GND
CE#
A
0
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A
15
A
14
A
13
A
12
A
11
A
10
A
9
A
8
NC
A
WE#
RP#
V
WP#
A
19
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
32 M
4 M
16 M
8 M
0580_02
NOTE:
Lower densities will have NC on the upper address pins. For example, an 8-Mbit device will have NC on Pins 9 and 15.
Figure 2. 48-Lead TSOP Package for x16 Configurations
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