參數(shù)資料
型號: TE28F016B3B90
廠商: INTEL CORP
元件分類: DRAM
英文描述: SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
封裝: 10 X 20 MM, TSOP-40
文件頁數(shù): 32/48頁
文件大?。?/td> 304K
代理商: TE28F016B3B90
SMART 3 ADVANCED BOOT BLOCK
E
32
PRELIMINARY
ADDRESSES [A]
CE#(WE#) [E(W)]
OE# [G]
WE#(CE#) [W(E)]
DATA [D/Q]
RP# [P]
IH
V
IL
V
V
IH
IL
V
V
IH
IL
V
IH
V
IL
V
IL
V
IL
V
IN
D
IN
A
IN
A
Valid
SRD
IN
D
IH
V
High Z
IH
V
IL
V
V [V]
PPH
V
V
PPLK
V
PPH
1
2
WP#
IL
V
IH
V
IN
D
A
B
C
D
E
F
W8
W6
W9
W3
W4
W7
W1
W5
W2
W10
W11
(Note 1)
(Note 1)
0580_08
NOTES:
1.
CE# must be toggled low when reading Status Register Data. WE# must be inactive (high) when reading Status Register
Data.
V
CC
Power-Up and Standby.
Write Program or Erase Setup Command.
Write Valid Address and Data (for Program) or Erase Confirm Command.
Automated Program or Erase Delay.
Read Status Register Data (SRD): reflects completed program/erase operation.
Write Read Array Command.
A.
B.
C.
D.
E.
F.
Figure 8. AC Waveform: Program and Erase Operations
相關(guān)PDF資料
PDF描述
TE28F016B3BA110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F016B3BA90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F016B3T110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F016B3T90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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