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參數(shù)資料
| 型號(hào)： | TE28F008BVB90 |
| 廠商： | Intel Corp. |
| 英文描述： | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 8兆位（為512k × 16，1024K × 8）SmartVoltage啟動(dòng)塊閃存系列 |
| 文件頁(yè)數(shù)： | 5/48頁(yè) |
| 文件大小： | 304K |
| 代理商： | TE28F008BVB90 |
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E
1.0
SMART 3 ADVANCED BOOT BLOCK
5
PRELIMINARY
INTRODUCTION
This datasheet contains the specifications for the
Advanced Boot Block flash memory family, which is
optimized for low power, portable systems. This
family of products features 1.65 V
–2.5 V or 2.7 V–
3.6 V I/Os and a low V
CC
/V
PP
operating range of
2.7 V–3.6 V
for
read,
operations. In addition this family is capable of fast
programming at 12 V. Throughout this document,
the term “2.7 V” refers to the full voltage range
2.7 V–3.6 V (except where noted otherwise) and
“V
PP
= 12 V” refers to 12 V ±5%. Section 1.0 and
2.0 provide an overview of the flash memory family
including applications, pinouts and pin descriptions.
Section 3.0 describes the memory organization and
operation for these products. Sections 4.0 and 5.0
contain
the
operating
Sections 6.0 and 7.0 provide ordering and other
reference information.
program,
and
erase
specifications.
Finally,
1.1
Smart 3 Advanced Boot Block
Flash Memory Enhancements
The Smart 3 Advanced Boot Block flash memory
features
Enhanced blocking for easy segmentation of
code and data or additional design flexibility
Program Suspend to Read command
V
CCQ
input of 1.65 V–2.5 V on all I/Os. See
Figures 1 through 4 for pinout diagrams and
V
CCQ
location
Maximum program and erase time specification
for improved data storage.
Table 1. Smart 3 Advanced Boot Block Feature Summary
Feature
28F008B3, 28F016B3,
28F032B3
(1)
28F400B3
(2),
28F800B3,
28F160B3, 28F320B3
Reference
V
CC
Read Voltage
2.7 V– 3.6 V
Section 4.2, 4.4
V
CCQ
I/O Voltage
1.65 V–2.5 V or 2.7 V– 3.6 V
Section 4.2, 4.4
V
PP
Program/Erase Voltage
2.7 V– 3.6 V or 11.4 V– 12.6 V
Section 4.2, 4.4
Bus Width
8-bit
16 bit
Table 3
Speed
80 ns, 90 ns, 100 ns, 110 ns
Section 4.5
Memory Arrangement
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit),
4096 Kbit x 8 (32 Mbit)
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit)
2048 Kbit x 16 (32 Mbit)
Section 2.2
Blocking (top or bottom)
Eight 8-Kbyte parameter blocks
and
Seven 64-Kbyte blocks (4-Mbit) or
Fifteen 64-Kbyte blocks (8-Mbit) or
Thirty-one 64-Kbyte main blocks (16-Mbit)
Sixty-three 64-Kbyte main blocks (32-Mbit)
Section 2.2
Appendix D
Locking
WP# locks/unlocks parameter blocks
All other blocks protected using V
PP
Section 3.3
Table 8
Operating Temperature
Extended: –40
°
C to +85
°
C
Section 4.2, 4.4
Program/Erase Cycling
100,000 cycles
Section 4.2, 4.4
Packages
40-lead TSOP
(1)
, 48-Ball
μ
BGA* CSP
(2)
48-Lead TSOP, 48-Ball
μ
BGA CSP
(2)
Figure 3, Figure 4
NOTES:
1.
2.
4-Mbit and 32-Mbit density not available in 40-lead TSOP.
4-Mbit density not available in
μ
BGA* CSP.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F008BVT90 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F320B3BA90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F320B3T110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3B110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3BA110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F008BVT90 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
| TE28F008C3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008C3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008C3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008C3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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