- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383991 > TE28F008B3T110 (INTEL CORP) SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY PDF資料下載
參數(shù)資料
| 型號： | TE28F008B3T110 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 1M X 8 FLASH 2.7V PROM, 110 ns, PDSO40 |
| 封裝： | 10 X 20 MM, TSOP-40 |
| 文件頁數(shù)： | 11/48頁 |
| 文件大小： | 304K |
| 代理商： | TE28F008B3T110 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁
E
SMART 3 ADVANCED BOOT BLOCK
11
PRELIMINARY
Table 2. Smart 3 Advanced Boot Block Pin Descriptions
(Continued)
Symbol
Type
Name and Function
V
CCQ
INPUT
OUTPUT V
CC
:
Enables all outputs to be driven to 1.8 V
– 2.5 V while
the V
CC
is at 2.7 V–3.3 V. If the V
CC
is regulated to 2.7 V–2.85 V, V
CCQ
can be driven at 1.65 V–2.5 V to achieve lowest power operation (see
Section 4.4,
DC Characteristics
.
This input may be tied directly to V
CC
(2.7 V–3.6 V).
V
CC
DEVICE POWER SUPPLY:
2.7 V–3.6 V
V
PP
PROGRAM/ERASE POWER SUPPLY:
Supplies power for program
and erase operations. V
PP
may be the same as V
CC
(2.7 V–3.6 V) for
single supply voltage operation. For fast programming at manufacturing,
11.4 V–12.6 V may be supplied to V
PP
. This pin cannot be left floating.
Applying 11.4 V–12.6 V to V
PP
can only be done for a maximum of 1000
cycles on the main blocks and 2500 cycles on the parameter blocks.
V
PP
may be connected to 12 V for a total of 80 hours maximum (see
Section 3.4 for details).
V
PP
< V
PPLK
protects memory contents against inadvertent or
unintended program and erase commands.
GND
GROUND:
For all internal circuitry. All ground inputs
must
be
connected.
NC
NO CONNECT:
Pin may be driven or left floating.
2.2
Block Organization
The Smart 3 Advanced Boot Block is an
asymmetrically-blocked architecture that enables
system integration of code and data within a single
flash
device.
Each
block
independently of the others up to 100,000 times.
For the address locations of each block, see the
memory maps in Appendix D.
can
be
erased
2.2.1
PARAMETER BLOCKS
The Smart 3 Advanced Boot Block flash memory
architecture includes parameter blocks to facilitate
storage of frequently updated small parameters
(e.g., data that would normally be stored in an
EEPROM). By using software techniques, the word-
rewrite functionality of EEPROMs can be emulated.
Each device contains eight parameter blocks of
8-Kbytes/4-Kwords (8192 bytes/4,096 words) each.
2.2.2
MAIN BLOCKS
After the parameter blocks, the remainder of the
array is divided into equal size main blocks (65,536
bytes / 32,768 words) for data or code storage. The
4-Mbit device contains seven main blocks; 8-Mbit
device contains fifteen main blocks; 16-Mbit flash
has thirty-one main blocks; 32-Mbit has sixty-three
main blocks.
3.0
PRINCIPLES OF OPERATION
Flash memory combines EEPROM functionality
with in-circuit electrical program and erase
capability. The Smart 3 Advanced Boot Block flash
memory family utilizes a Command User Interface
(CUI) and automated algorithms to simplify program
and erase operations. The CUI allows for 100%
CMOS-level control inputs and fixed power supplies
during erasure and programming.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F008B3T90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3TA110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3TA90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3B90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3BA110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F008B3T120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3TA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。