參數(shù)資料
型號： TE28F008B3B90
廠商： INTEL CORP
元件分類： DRAM
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 1M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
封裝： 10 X 20 MM, TSOP-40
文件頁數(shù)： 35/48頁
文件大?。?/td> 304K
代理商： TE28F008B3B90
E
SMART 3 ADVANCED BOOT BLOCK
35
PRELIMINARY
Ordering Information Valid Combinations
40-Lead TSOP
48-Ball μBGA*
CSP
(1)
48-Lead TSOP
48-Ball μBGA CSP
Ext. Temp.
32 M
GT28F032B3TA95
GT28F032B3BA95
GT28F032B3TA115
GT28F032B3BA115
TE28F320B3TA95
TE28F320B3BA95
TE28F320B3TA115
TE28F320B3BA115
GT28F320B3TA95
GT28F320B3BA95
GT28F320B3TA115
GT28F320B3BA115
Ext. Temp.
16 M
TE28F016B3TA90
(2)
GT28F016B3TA90
(2)
TE28F160B3TA90
(2)
GT28F160B3TA90
(2)
TE28F016B3BA90
(2)
GT28F016B3BA90
(2)
TE28F160B3BA90
(2)
GT28F160B3BA90
(2)
TE28F016B3TA110
(2)
GT28F016B3TA110
(2)
TE28F160B3TA110
(2)
GT28F160B3TA110
(2)
TE28F016B3BA110
(2)
GT28F016B3BA110
(2)
TE28F160B3BA110
(2)
GT28F160B3BA110
(2)
Ext. Temp.
8 M
TE28F008B3TA90
(2)
GT28F008B3T90
TE28F800B3TA90
(2)
GT28F800B3T90
TE28F008B3BA90
(2)
GT28F008B3B90
TE28F800B3BA90
(2)
GT28F800B3B90
TE28F008B3TA110
(2)
GT28F008B3T110
TE28F800B3TA110
(2)
GT28F800B3T110
TE28F008B3BA110
(2)
GT28F008B3B110
TE28F800B3BA110
(2)
GT28F800B3B110
Ext. Temp
4 M
TE28F400B3T110
TE28F400B3B110
NOTES:
1.
The 48-ball μBGA package top side mark reads F160B3 [or F800B3]. This mark is identical for both x8 and x16 products.
All product shipping boxes or trays provide the correct information regarding bus architecture. However, once the devices
are removed from the shipping media, it may be difficult to differentiate based on the top side mark. The device identifier
(accessible through the Device ID command: see Section 3.2.2 for further details) enables x8 and x16 μBGA package
product differentiation.
The second line of the 48-ball μBGA package top side mark specifies assembly codes. For samples only, the first
character signifies either “E” for engineering samples or “S” for silicon daisy chain samples. All other assembly codes
without an “E” or “S” as the first character are production units.
Product can be ordered in either 0.25 μm or 0.4 μm material. The “A” before the access speed specifies 0.25 μm material.
For new designs, Intel recommends using 0.25 μm Advanced Boot Block devces.
2.
3.
4.
相關(guān)PDF資料
PDF描述
TE28F008B3BA110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F008B3BA90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F008B3T110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F008B3T90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F008B3TA110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F008B3BA110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F008B3BA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F008B3T110 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述:
TE28F008B3T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
TE28F008B3T150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
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