參數(shù)資料
型號(hào)： TE28F004S3-150
廠商： INTEL CORP
元件分類： DRAM
英文描述： BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述： 512K X 8 FLASH 2.7V PROM, 150 ns, PDSO40
封裝： 10 X 20 MM, TSOP-40
文件頁數(shù)： 29/41頁
文件大?。?/td> 703K
代理商： TE28F004S3-150
E
6.0
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY
29
PRELIMINARY
ELECTRICAL SPECIFICATIONS
6.1
Absolute Maximum Ratings*
Temperature under Bias..............
–10 °C to +80 °C
Storage Temperature................. –65 °C to +125 °C
Voltage On Any Pin
(except V
PP,
and RP#)......... –2.0 V to +7.0 V
(2)
V
PP
Voltage ...........................–2.0 V to +14.0 V
(1,2)
RP# Voltage ........................–2.0 V to +14.0 V
(1,2,4)
Output Short Circuit Current.....................100 mA
(3)
NOTICE: This datasheet contains information on new
products production. Do not finalize a design with this
information. Revised information will be published when
the product is available. Verify with your local Intel Sales
office that you have the latest datasheet before finalizing a
design
.
*
WARNING: Stressing the device beyond the
“Absolute
Maximum Ratings” may cause permanent damage. These
are stress ratings only. Operation beyond the “Operating
Conditions” is not recommended and extended exposure
beyond the “Operating Conditions” may affect device
reliability
.
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is
–0.5 V on input/output pins and –0.2 V on V
CC
, RP#,
and V
PP
pins. During transitions, this level may undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on
input/output pins and V
CC
is V
CC
+0.5 V which, during transitions, may overshoot to V
CC
+2.0 V for periods <20 ns.
2. Maximum DC voltage on V
PP
and RP# may overshoot to +14.0 V for periods <20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
4. RP# voltage is normally at V
IL
or V
IH
. Connection to supply of V
HH
is allowed for a maximum cumulative period of 80 hours.
6.2
Commercial Temperature Operating Conditions
Commercial Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Unit
Test Condition
T
A
Operating Temperature
0
+70
°C
Ambient Temperature
V
CC1
V
CC
Supply Voltage (2.7 V–3.6 V)
1
2.7
3.6
V
V
CC2
V
CC
Supply Voltage (3.3 V ± 0.3 V)
3.0
3.6
V
NOTE:
1.
Block erase, program, and lock-bit configuration with V
CC
<
2.7 V should not be attempted.
6.3
T
A
= +25 °C, f = 1 MHz
Capacitance
(1)
Symbol
Parameter
Typ
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
= 0.0 V
C
OUT
Output Capacitance
8
12
pF
V
OUT
= 0.0 V
NOTE:
1.
Sampled, not 100% tested.
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