參數(shù)資料
型號: TE13005D
英文描述: Silicon NPN High Voltage Switching Transistor
中文描述: 硅npn型高壓開關(guān)晶體管
文件頁數(shù): 2/9頁
文件大小: 97K
代理商: TE13005D
TE13004D
TE13005D
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
2 (9)
Electrical Characteristics
T
case
= 25
°
C, unless otherwise specified
Parameter
Transistor
Collector cut-off current
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
V
CE
= 600 V
V
CE
= 700 V
V
CE
= 600 V; T
case
= 150 C
V
CE
= 700 V; T
case
= 150 C
I
C
= 100 mA; L = 125 mH;
I
measure
= 100 mA
TE13004D
TE13005D
TE13004D
TE13005D
TE13004D V
(BR)CEO
I
CES
I
CES
I
CES
I
CES
50
50
0.5
0.5
A
A
mA
mA
V
Collector-emitter
breakdown voltage
(figure 1)
Emitter-base breakdown
voltage
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC forward current
transfer ratio
300
TE13005D V
(BR)CEO
400
V
I
E
= 1 mA
V
(BR)EBO
9
V
I
C
= 2 A; I
B
= 0.4 A
V
CEsat
0.5
V
I
C
= 2 A; I
B
= 0.4 A
V
BEsat
1.6
V
V
CE
= 2 V; I
C
= 10 mA
V
CE
= 2 V; I
C
= 1 A
V
CE
= 2 V; I
C
= 4 A
I
C
= 2 A; I
B
= 0.2 A; t = 1 s
I
C
= 2 A; I
B
= 0.2 A; t = 3 s
V
CE
= 10 V; I
C
= 500 mA;
f = 1 MHz
h
FE
h
FE
h
FE
10
10
4
Dynamic saturation
voltage
Gain bandwidth product
V
CEsatdyn
V
CEsatdyn
f
T
2.5
0.6
V
V
4
MHz
Free-wheel diode
Forward voltage
Turn-on transient peak
voltage
Reverse recovery cur-
rent
I
F
= 2 A
I
F
= 2 A; di
F
/dt = 10 A/ s
V
F
V
FP
1.2
4
1.5
5
V
V
I
F
= 2 A; di
F
/dt = 5 A/ s;
V
S
= 200 V
I
RM
4
A
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