參數(shù)資料
型號： TDF8555J/N1
廠商： NXP SEMICONDUCTORS
元件分類： 音頻／視頻放大
英文描述： 44 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM37
封裝： PLASTIC, SOT725-1, 37 PIN
文件頁數(shù)： 41/55頁
文件大?。?/td> 534K
代理商： TDF8555J/N1
TDF8555J
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 August 2011
46 of 55
NXP Semiconductors
TDF8555J
4
45 W power amplifier with multiple voltage regulator
(1) Connect good quality decoupling capacitors close to supply pins to suppress peak voltages on the supply line which can occur
if several channels are shorted to VP simultaneously and protection activated. 0805 case size capacitors (X7R material,
220 nF) connected close to each of the supply pins have given good results.
(2) ACGND capacitor value must be close to 4
input capacitance; 4 470 nF can be used instead of 2.2 F.
(3) For EMC reasons, a 10 nF capacitor can be connected between each amplifier output and ground.
Fig 29. Test and application diagram
001aan413
BACKUP
MECHANISM
ENABLE
LOGIC
LOADDUMP
PROTECTION
TEMPERATURE
PROTECTION
STANDBY/ MUTE
I2C-BUS
INTERFACE
CLIP DETECT/ DIAGNOSTIC
REFERENCE
VOLTAGE
REGULATOR 1
REGULATOR 6
REGULATOR 3
REGULATOR 2
REGULATOR 4
REGULATOR 5
SWITCH 1
SWITCH 2
MUTE
PROTECTION/
DIAGNOSTIC
26 dB/
20 dB
PROTECTION/
DIAGNOSTIC
26 dB/
20 dB
PROTECTION/
DIAGNOSTIC
26 dB/
20 dB
PROTECTION/
DIAGNOSTIC
EXTERNAL DC/DC
DOWN
CONVERTER
26 dB/
20 dB
MUTE
35
27
20
6
25
9
7
5
3
17
19
21
23
16
8
13
SGND
SVR
IN4
IN3
IN2
IN1
STB
SCL
SDA
VP
BUCAP
ACGND
PGND1 PGND2/TAB PGND3 PGND4
10
14
15
12
11
22
4
2
1
18
24
32
29
34
33
31
30
37 REG2
REG1
10 μF
(50 V)
100 nF
REG3
REG4
REG5
SW1
SW2
VP1
DIAG
OUT1+
OUT1-
OUT2+
OUT2-
OUT3+
OUT3-
OUT4+
OUT4-
VP2
14.4 V
GND
36
VP
1000 μF
(16 V)
220 nF
220 μF
(16 V)
14.4 V
220 nF
10 μF
(50 V)
100 nF
10 μF
(50 V)
100 nF
10 μF
(50 V)
100 nF
10 μF
(50 V)
100 nF
10 μF
(50 V)
100 nF
10 μF
(50 V)
10 kΩ
100 nF
RS
470 nF
RS
470 nF
RS
470 nF
RS
470 nF
2.2 μF
(4 × 470 nF)
10 μF
TDF8555J
220
nF
220
nF
VDCDC
26
220 nF
2200 μF
(16 V)
28 REG6
10 μF
(50 V)
100 nF
(1)
(2)
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