參數(shù)資料
型號(hào): TDA9829T
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: Downconverter For DVB(下變頻器 (DVB應(yīng)用))
中文描述: RF/MICROWAVE DOWN CONVERTER
文件頁(yè)數(shù): 6/20頁(yè)
文件大小: 153K
代理商: TDA9829T
1998 Nov 09
6
Philips Semiconductors
Product specification
Downconverter for DVB
TDA9829T
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
P
= 5 V; T
amb
= 25
°
C; see Table 1 for input frequencies; input level V
iIF(3
4)
= 10 mV (RMS value); measurements
taken in Fig.8; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction
to ambient
in free air
85
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply (pin 19)
V
P
I
P
supply voltage
supply current
note 1
4.5
81
5.0
96
5.5
111
V
mA
IF amplifier (measured at f
IF
= 43.75 MHz; pins 3 and 4)
V
(3-4)(rms)
input sensitivity (RMS value)
V
i(3-4)(rms)
maximum input signal level
(RMS value)
G
IF
total gain control IF amplifier
tilt for
f
±
3 MHz
R
i(3-4)(diff)
input resistance (differential)
C
i(3-4)(diff)
input capacitance (differential)
1 dB DVB signal at output
1 dB DVB signal at output
140
100
200
150
μ
V
mV
59
64
0.5
2.2
1.7
1
dB
dB
k
pF
f
s
= 6.9 MHz; 40 dB gain
note 2
note 2
DVB mixer and VCO (pins 10, 15 and 16);
see notes 4 and 5 and Table 1
f
VCO(max)
f
VCO(US)
f
VCO(EU)
V
ref(rms)
maximum oscillator frequency
VCO frequency for USA
VCO frequency for Europe
oscillator voltage swing between
pins 15 and 16 (RMS value)
VCO phase noise
VCO control range (pin 10)
VCO control input resistance
(pin 10)
control steepness
f
s
/
V
10
2(f
IF
+ f
s
)
2(f
IF
+ f
s
)
2(f
IF
+ f
s
)
125
130
97.5
86.0
60
MHz
MHz
MHz
mV
SSB
V
VCO
R
i(VCO)
f = 100 kHz; free-running
see Figs 6 and 7
103
0
50
107
63
V
P
76
dBc/Hz
V
k
CR
stps(VCO)
see Figs 6 and 7
DVB (USA)
DVB (Europe)
0.29
0.40
MHz/V
MHz/V
DVB output amplifier (pins 11 and 20)
V
o(DVB)(p-p)
DVB output signal (QAM)
(peak-to-peak value)
DC internal bias current for
emitter-follower (pin 11)
maximum AC and DC output
sink current (pin 11)
maximum AC and DC output
source current (pin 11)
1.8
2.1
2.4
V
I
bias(int)
1.9
2.3
2.7
mA
I
sink(max)
1.5
mA
I
source(max)
2.0
mA
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