
October 1994
9
Philips Semiconductors
Product specification
Satellite sound circuit with noise reduction
TDA8740; TDA8740H
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
All voltages referenced to ground pins 9 and 34 (4 and 30).
All voltages referenced to ground pins 9 and 34 (4 and 30). These voltages must not exceed V
P
or maximum value
at any time.
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
All voltages referenced to ground at pins 9 and 34 (4 and 30). Measured in test circuit Fig.4; V
P
= 12 V; T
amb
= 25
°
C;
f
M
=
f
S1
=
f
S2
= 0 kHz (no modulation); f
OM
= 6.5 MHz; f
OS1
= 7.02 MHz; f
OS2
= 7.20 MHz; HF level at pin 18 (14):
40 mV (RMS); HF level at selected secondary inputs: 20 mV (RMS); MCS = logic 0 [V
7
(V
2
) = 0 V];
SCD = logic 0 [V
11
(V
6
) = 0 V]; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
V
n
supply voltage
voltage on pins 2, 4, 6, 8, 10, 12, 14 and 16
(1, 3, 5, 7, 9, 11, 40 and 42)
voltage on pins 3, 5, 11, 13, 15, 17, 20, 21, 23 to 26, 31, 33,
35, 37, 40, 41, and 42 (6, 8, 10, 13, 16, 17, 19, 20 to 22, 27,
29, 31, 33, 36, 37, 38, 41 and 43)
voltage on pins 7, 18, 19, 27 to 30, 32, 36, 38 and 39
(2, 14, 15, 23 to 26, 28, 32, 34 and 35)
storage temperature
operating ambient temperature
note 1
note 2
0
0
13.2
1
V
V
V
n
note 2
0
9
V
V
n
note 1
0
V
P
V
T
stg
T
amb
55
20
+150
+70
°
C
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
SDIP42
QFP44
53
69
K/W
K/W
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
P
I
P
P
tot
V
n
supply voltage
supply current
total power dissipation
voltage on pins 20, 21, 23, 24, 25, 27, 28, 30, 32, 33, 35, 36
and 38 (16, 17, 19, 20, 21, 23, 24, 26, 28, 29, 31, 32 and 34)
input reference voltage on pin 19 (15)
voltage on pins 2, 4, 6, 8, 10, 12, 14 and 16
(1, 3, 5, 7, 9, 11, 40 and 42)
voltage on pins 40 and 42 (36 and 38)
voltage on pin 41 (37)
input current at pin 18 (14)
8.0
12
38
3.8
13.2
45
600
V
mA
mW
V
V
REF
V
n
3.7
3.8
0
3.9
V
V
V
CDCL,CDCR
V
CDCM
I
IN3
2.7
2.8
1
V
V
μ
A