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參數(shù)資料
| 型號： | TDA8561TH |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 12 W, 4 CHANNEL, AUDIO AMPLIFIER, PDSO20 |
| 封裝： | PLASTIC, HSOP-20 |
| 文件頁數(shù)： | 21/24頁 |
| 文件大?。?/td> | 128K |
| 代理商： | TDA8561TH |
2000 Feb 18
6
Philips Semiconductors
Preliminary specication
2
× 24 W BTL or 4 × 12 W single-ended
car radio power amplier
TDA8561TH
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
In accordance with IEC 60747-1.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
positive supply voltage
operating
18
V
non-operating
30
V
load dump protection
during 50 ms; tr ≥ 2.5 ms
45
V
IOSM
non-repetitive peak output current
6A
IORM
repetitive peak output current
4A
Tstg
storage temperature
55
+150
°C
Tamb
ambient temperature
40
+85
°C
Tvj
virtual junction temperature
150
°C
Vpsc
AC and DC short-circuit safe voltage
18
V
Vpr
reverse polarity
6V
Ptot
total power dissipation
60
W
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
40
K/W
Rth(j-c)
thermal resistance from junction to case
see Figs 6 and 7
1.3
K/W
Fig.6
Equivalent thermal resistance network;
BTL application.
handbook, halfpage
2.2 K/W
0.2 K/W
2.2 K/W
virtual junction
output 1
output 2
case
MEA861 - 1
Fig.7
Equivalent thermal resistance network;
single-ended application.
handbook, halfpage
3.0 K/W
0.7 K/W
3.0 K/W
virtual junction
output 1
output 2
case
3.0 K/W
0.7 K/W
3.0 K/W
output 3
output 4
MEA860 - 2
0.2 K/W
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