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參數(shù)資料
| 型號： | TDA8060ATS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Satellite ZERO-IF QPSK down-converter |
| 中文描述： | RF/MICROWAVE DOWN CONVERTER |
| 封裝： | PLASTIC, SSOP-24 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 87K |
| 代理商： | TDA8060ATS |
2000 Nov 10
8
Philips Semiconductors
Product specification
Satellite ZERO-IF QPSK down-converter
TDA8060ATS
Notes
1.
2.
3.
This parameter is very dependent on the application; the range represents the capacity of the oscillator.
Measured in baseband (at pin IOUT or pin QOUT) on a carrier at 2 MHz and 25 dBmV.
f
LO
= 1000 MHz; RF wanted = 1005 MHz; RF unwanted = 2002 MHz (see Fig.3). Done on the demo board
OM5732.
Quadrature error with respect to 90
°
.
The differential input impedance of the IC is 34
in series with the IC pins which give an inductance of 5 nH.
For optimum performance, this inductance should be cancelled by a matching network. Coupling capacitors of 1 pF
give an acceptable result.
Gain = V
o(dB)
V
i(dB)
(see Fig.4). Gain for symmetrical RF input.
4.
5.
6.
B
(
3dB)
Z
o
V
o(p-p)
R
o(L)
Overall with a 100 nF capacitor instead of LP1 and LP2
channel
3 dB bandwidth
output impedance
output voltage level (peak-to-peak value)
resistive load at output
400
80
50
1
MHz
V
note 8
t
d(g)(I-Q)(40)
group delay mismatch in 40 MHz band
between I and Q
group delay ripple in 40 MHz band for I or Q
voltage gain mismatch in 40 MHz band
between I and Q
voltage gain ripple in 40 MHz band for I or Q
0.5
2
ns
t
d(g)(I-Q)(R40)
G
v(I-Q)(40)
0.5
1
1
ns
dB
G
R(I-Q)(40)
S
YMMETRICAL
RF
INPUT
1
dB
G
v(RF-IBBOUT)(min)
minimum voltage gain from RF input to
pin IBBOUT
maximum voltage gain from RF input to
pin IBBOUT
minimum voltage gain from RF input to
pin QBBOUT
maximum voltage gain from RF input to
pin QBBOUT
noise figure at maximum gain
V
AGC
= 0.1V
CC
26
dB
G
v(RF-IBBOUT)(max)
V
AGC
= 0.9V
CC
63
dB
G
v(RF-QBBOUT)(min)
V
AGC
= 0.1V
CC
26
dB
G
v(RF-QBBOUT)(max)
V
AGC
= 0.9V
CC
63
dB
F
i
V
AGC
= 0.9V
CC
;
Z
source
= 50
13
16
dB
A
SYMMETRICAL
RF
INPUT
G
v(RF-IBBOUT)(min)
minimum voltage gain from RF input to
pin IBBOUT
maximum voltage gain from RF input to
pin IBBOUT
minimum voltage gain from RF input to
pin QBBOUT
maximum voltage gain from RF input to
pin QBBOUT
noise figure at maximum gain
V
AGC
= 0.1V
CC
26
dB
G
v(RF-IBBOUT)(max)
V
AGC
= 0.9V
CC
63
dB
G
v(RF-QBBOUT)(min)
V
AGC
= 0.1V
CC
26
dB
G
v(RF-QBBOUT)(max)
V
AGC
= 0.9V
CC
63
dB
F
i
V
AGC
= 0.9V
CC
;
Z
= 50
14
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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