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參數(shù)資料
| 型號(hào)： | TDA8011T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | IF amplifier for satellite TV receivers |
| 中文描述： | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-96-1, 8 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 80K |
| 代理商： | TDA8011T |
February 1995
4
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe it is
desirable to take normal precautions appropriate to handling MOS devices.
CHARACTERISTICS
V
CC
= 5 V; f
i
= 70, 480 and 610 MHz; T
amb
= 25
°
C; measured in application circuit of Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
V
(max)
I
source(max)
t
sc(max)
T
stg
T
j
T
amb
supply voltage
maximum voltage on all pins
maximum output source current
maximum short-circuit time on outputs
storage temperature
junction temperature
operating ambient temperature
0.3
0.3
55
10
6.0
V
CC
10
10
+150
+150
+80
V
V
mA
s
°
C
°
C
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
160
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
I
CC
supply current
27
35
45
mA
IF amplifier
G
v(max)
G
v(min)
G
V
i
V
I(DC)
V
o
V
O(DC)
F
maximum voltage gain
minimum voltage gain
tilt
input voltage level
DC input voltage level
output voltage level
DC output voltage level
noise figure
V
AGC
= 0.9V
CC
; note 1
V
AGC
= 0.1V
CC
; note 1
f
i
= 20 MHz; note 2
25
0.4
2.5
2.2
21
96
85
15
dB
dB
dB
dB
μ
V
V
dB
μ
V
V
dB
unmatched configuration;
note 3
note 4
note 5
F
(min)
IM3
minimum noise figure
third-order intermodulation
distance
differential input resistance
differential input capacitance
single-ended output resistance
40
11
dB
dB
R
i(diff)
C
i(diff)
R
o(SE)
note 6
note 6
4
0.75
50
k
pF
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