參數資料
型號： TDA6501TT
廠商： NXP SEMICONDUCTORS
元件分類： 調諧器
英文描述： 5 V mixer/oscillator and synthesizer for PAL and NTSC standards
中文描述： 3-BAND, VIDEO TUNER, PDSO32
封裝： 6.10 MM, 0.65 MM PITCH, PLASTIC, MO-153, SOT487-1, TSSOP-32
文件頁數： 17/37頁
文件大小： 223K
代理商： TDA6501TT
9397 750 15057
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 14 June 2005
17 of 37
Philips Semiconductors
TDA6500; TDA6501
5 V mixer/oscillator and synthesizer for PAL and NTSC standards
I
IL
LOW-level input current
V
BUS
= 1.5 V; V
CC
= 0 V
V
BUS
= 0 V; V
CC
= 5.5 V
-
10
-
-
10
-
μ
A
μ
A
SDA output
I
LO
V
o
Clock frequency
f
clk
Charge pump output CP
I
IH
leakage current
output voltage
SDA output V
o
= 5.5 V
I
o(sink)
= 3 mA
-
-
-
-
10
0.4
μ
A
V
clock frequency
-
-
400
kHz
HIGH-level input current
(absolute value)
LOW-level input current
(absolute value)
off-state leakage current
CP = 1
-
280
-
μ
A
I
IL
CP = 0
-
60
-
μ
A
I
LO(off)
Tuning voltage output VT
I
LO(off)
V
o
T2 = 0; T1 = 1; T0 = 0
15
0
+15
nA
off-state leakage current
output voltage when the
loop is closed
OS = 1; V
VT
= 33 V
OS = 0; T2 = 0; T1 = 0; T0 = 1;
R
L
= 27 k
; V
VT
= 33 V
-
0.2
-
-
10
32.7
μ
A
V
Table 19:
V
CC
= 5 V; T
amb
= 25
°
C; values are given for an IF amplifier with 500
load (measured as shown in
Figure 7
for the PAL
standard); unless otherwise specified.
Symbol
Parameter
Conditions
PLL
…continued
Min
Typ
Max
Unit
Table 20:
V
CC
= 5 V; T
amb
= 25
°
C; values are given for an IF amplifier with 500
load (measured as shown in
Figure 7
for the PAL
standard); unless otherwise specified.
Symbol
Parameter
Conditions
Low band mixer mode (P0 = 1 and P1 = 0); including IF amplifier
f
RF
RF frequency
picture carrier
G
v
voltage gain
f
RF
= 44.25 MHz; see
Figure 8
f
RF
= 157 MHz; see
Figure 8
NF
noise figure
f
RF
= 50 MHz; see
Figure 9
and
10
V
o(mod)
output voltage causing
0.3 % cross modulation in
channel
V
o(FM)
output voltage causing
1.1 kHz incidental FM
f
RF
= 157 MHz
INT
SO2
channel SO2 beat
V
RFpix
= 115 dB
μ
V at IF output
V
i
input level without lock-out
see
Figure 11
g
os
optimum source
conductance for noise figure
f
RF
= 150 MHz
g
i
input conductance
f
RF
= 44.25 MHz; see
Figure 4
f
RF
= 161.25 MHz; see
Figure 4
C
i
input capacitance
f
RF
= 44.25 to 161.25 MHz;
see
Figure 4
High band mixer in mid band mode (P0 = 0 and P1 = 1); including IF amplifier
f
RF
RF frequency
picture carrier
Mixer
Min
Typ
Max
Unit
[1]
44.25
25.0
25.0
-
108
108
-
27.5
27.5
8.0
111
111
154.25 MHz
30
30
10.0
-
-
dB
dB
dB
dB
μ
V
dB
μ
V
f
RF
= 44.25 MHz; see
Figure 12
f
RF
= 157 MHz; see
Figure 12
f
RF
= 44.25 MHz
[2]
108
111
111
60
-
0.7
0.9
0.30
0.33
1.29
-
-
-
120
-
-
-
-
-
dB
μ
V
dB
μ
V
dBc
dB
μ
V
mS
mS
mS
mS
pF
[2]
108
[3]
57
[4]
-
f
RF
= 50 MHz
-
-
-
-
-
[1]
161.25 -
439.25 MHz
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