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參數(shù)資料
| 型號(hào)： | TDA5737ATS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 調(diào)諧器 |
| 英文描述： | 3-BAND, VIDEO TUNER, PDSO24 |
| 封裝： | 5.30 MM, PLASTIC, MO-150, SOT-340-1, SSOP-24 |
| 文件頁(yè)數(shù)： | 25/28頁(yè) |
| 文件大?。?/td> | 180K |
| 代理商： | TDA5737ATS |
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2000 Dec 19
6
Philips Semiconductors
Preliminary specication
5 V VHF, hyperband and UHF
mixers/oscillators for TV and VCR 3-band tuners
TDA5737A
CHARACTERISTICS
VP =5V; Tamb =25 °C; measured in circuit of Fig.16; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
4.5
5.0
5.5
V
IP
supply current
42
50
58
mA
VSW
switching voltage depending
on supply voltage VP
band A; note 1
0
0.18VP V
band B; note 1
0.26VP
0.47VP V
band C; note 1
0.55VP
VP
V
ISW
switching current
band A; note 1
2
A
band B; note 1
10
A
band C; note 1
25
A
Band A mixer (including IF amplier)
fi(RF)
RF input frequency
note 2
41
171
MHz
Gv
voltage gain
fRF = 50 MHz; see Fig.3; note 3
20.5
23.0
25.5
dB
fRF = 170 MHz; see Fig.3; note 3
20.5
23.0
25.5
dB
NF
noise gure
fRF = 50 MHz; see Figs.4 and 5
7.5
9
dB
fRF = 170 MHz; see Figs.4 and 5
910
dB
Vo
output voltage causing 1%
cross modulation in channel
fRF = 50 MHz; see Fig.6
115
118
dB
V
fRF = 170 MHz; see Fig.6
113
116
dB
V
Vi
input voltage level causing
10 kHz pulling in channel
fRF = 170 MHz; note 4
96
100
dBmV
gos
optimum source conductance
for noise gure
fRF =50MHz
0.5
mS
fRF = 170 MHz
1.1
mS
Yi
input admittance
fRF = 50 to 170 MHz; see Fig.11
0.3
mS
Ci
input capacitance
fRF = 50 to 170 MHz; see Fig.11
1.9
pF
Band A oscillator
fosc
oscillator frequency
0.45 V < Vt < 28 V; notes 1 and 5
80
210
MHz
fshift
frequency shift
VP = 5%; note 6
53
kHz
fdrift
frequency drift
no compensation
T=25 °C; NP0 capacitors; note 7
550
tbf
kHz
5 s to 15 minutes after switch on;
NP0 capacitors; note 8
150
tbf
kHz
with compensation; see Fig.17
T=25 °C; notes 7 and 9
300
tbf
kHz
5 s to 15 minutes after switch on;
notes 8 and 9
20
tbf
kHz
Vripple(p-p) ripple susceptibility of supply
voltage (peak-to-peak value)
4.75 V < VP < 5.25 V; see Fig.7
fosc = 80 MHz
20
mV
fosc = 210 MHz
20
mV
ΦN
phase noise
measured at the IF output at 10 kHz
offset; Vo = 105 dBV
81
dBc/Hz
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