參數(shù)資料
型號: TD9944
廠商: ELAN Microelctronics Corp .
英文描述: Dual N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓240V,低門限2.0V,雙N溝道增強型DMOS場效應(yīng)管)
中文描述: 雙N溝道增強型場效應(yīng)管垂直的DMOS(擊穿電壓240伏,2.0V的低門限,雙?溝道增強型的DMOS場效應(yīng)管)
文件頁數(shù): 4/4頁
文件大小: 26K
代理商: TD9944
9-13
9
TD9944
Maximum Rated Safe Operating Area
1
1000
100
10
0.1
1.0
10
0.01
V
DS
(volts)
I
D
Thermal Response Characteristics
T
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
4.0
0.8
1.6
2.4
3.2
G
F
(
I
D
(amperes)
Power Dissipation vs. AmbientTemperature
0
150
100
50
2.0
0
125
75
°
(
25
T
C
C)
D
P
TO-243AA
T
A
= -55
°
C
V
DS
= 25V
TO-243AA (pulsed)
T
A
= 25
°
C
T
A
= 150
°
C
TO-243AA (DC)
1.0
TO-243AA
P
T
C
= 25 C
D
= 0.55W
0
T
A
= 25
°
C
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
V
G
(
Capacitance vs. Drain-to-Source Voltage
200
C
V
DS
(volts)
0
10
20
30
40
150
100
0
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
63pF
V
DS
= 40V
V
DS
= 10V
f = 1MHz
C
ISS
C
OSS
C
RSS
150 pF
50
0
Typical Performance Curves
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