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| 型號： | TCN4040D-2.5ENB |
| 廠商： | TelCom Semiconductor, Inc. |
| 英文描述： | PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE |
| 中文描述： | 精密微功耗并聯(lián)電壓基準(zhǔn) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 127K |
| 代理商： | TCN4040D-2.5ENB |
TCN4040
2
PRELIMINARY INFORMATION
TCN4040-01 6/16/97
PRECISION MICROPOWER
SHUNT VOLTAGE REFERENCE
ELECTRICAL CHARACTERISTICS:
Boldface
type specifications apply for T
A
= T
J
= T
MIN
to T
MAX
.
All other specifica-
tions; T
A
= T
J
= 25
°
C.
TCN4040CEOA
TCN4040CENB
TCN4040CEZB
TCN4040DEOA
TCN4040DENB
TCN4040DEZB
TCN4040EENB
TCN4040EEZB
Symbol Parameter
Test
Conditions
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
V
R
Reverse Breakdown
Voltage
Reverse Breakdown
Voltage Tolerance
Minimum Operating
Current
Average Reverse
Breakdown Voltage
Temperature
Coefficient
Reverse Breakdown
Voltage Change with Notes 4, 5
Operating Current
Change
I
R
=100
μ
A
Notes 4, 5
I
R
=100
μ
A
Notes 4, 5, 6
Notes 4, 5
—
2.500
—
—
2.500
—
— 2.500
—
V
—
—
—
—
—
±
12
±
29
60
65
±
100
—
—
—
—
—
±
25
±
49
65
70
±
150
—
—
—
—
—
—
±
50
±
74
65
70
±
150
mV
I
RMIN
45
45
45
μ
A
V
R
/
T
I
R
=10mA
I
R
=1mA
I
R
=100
μ
A
Notes 4, 5
I
RMIN
≤
I
R
≤
1mA
±
20
±
15
±
15
±
20
±
15
±
15
±
20
±
15
±
15
ppm/
°
C
V
R
/
I
R
—
—
0.4
0.8
1.0
—
—
0.4
1.0
1.2
—
—
0.4
1.0
1.2
mV
1mA
≤
I
R
=12mA
—
—
—
2.3
6.0
8.0
0.9
—
—
—
2.3
8.0
10.0
1.1
—
—
—
2.3
8.0
10.0
1.1
mV
Z
R
Reverse Dynamic
Impedance
I
R
=1mA, f = 120Hz,
I
AC
= 0.1 I
R
Notes 4, 5
0.3
0.3
0.3
ABSOLUTE MAXIMUM RATINGS*
(Note 1)
Reverse Current.......................................................20mA
Forward Current .......................................................10mA
Power Dissipation (T
A
= 25
°
C) (Note 2)
SOT-23B-3 Package ......................................230mW
TO-92 Package ..............................................440mW
SO-8
Package ................................................470mW
Storage Temperature ...........................– 65
°
C to + 150
°
C
Lead Temperature (Soldering, 10 seconds)
EOA ................................................................+260
°
C
ENB ................................................................+300
°
C
EZB.................................................................+300
°
C
ESD Susceptibility
Human Body Model (Note 3) ................................2kV
Machine Model (Note 3) .....................................200V
*Functional operation above the absolute maximum stress rating is not
implied.
OPERATING RATINGS (NOTES 1 AND 2)
Temperature Range
(T
MIN
≤
T
A
≤
T
MAX
) .....................– 40
°
C
≤
T
A
≤
+85
°
C
Reverse Current
TCN4040-2.5 ...................................... .60
μ
A to 15mA
NOTES:
1. Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which
the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see Electrical
Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when
the device is not operated under the listed test conditions.
2. The maximum power dissipation must be derated at elevated temperatures and is dictated by T
JMAX
(maximum junction temperature),
θ
JA
(junction to ambient thermal resistance), and T
A
(ambient temperature). The maximum allowable power dissipation at any temperature is
PD
MAX
= (T
JMAX
– T
A
) /
θ
JA
or the number given in Absolute Maximum Ratings, whichever is lower. For the TCN4040, T
JMAX
= 125
°
C, and
the typical thermal resistance (
θ
JA
), when board mounted, is 185
°
C/W for the M package, 326
°
C/W for the SOT-23B-3 package, and 180
°
C/W with 0.4” lead length and 170
°
C/W with 0.125” lead length for the TO-92-3 package.
3. The human body model is a 100pF capacitor discharged through a 1.5k
resistor into each pin. The machine model is a 200pF capacitor
discharged directly into each pin.
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