參數(shù)資料
型號(hào)： TCM850
廠商： TelCom Semiconductor, Inc.
英文描述： REGULATED GaAs FET BIAS SUPPLY
中文描述： 穩(wěn)壓砷化鎵場(chǎng)效應(yīng)管偏置電源
文件頁數(shù)： 2/7頁
文件大?。?/td> 75K
代理商： TCM850
4-28
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage (V
IN
to GND).................. – 0.3V to +10.5V
V
NEGOUT
to GND ...................................... – 10.5V to 0.3V
V
IN
to V
NEGOUT...............................................................
– 0.3 to 21V
V
OUT
to GND** ........................................V
NEGOUT
to 0.3V
SHDN or OSC (Pin 4) to GND ........– 0.3V to (V
IN
+ 0.3V)
Power Dissipation (T
A
< 70
°
C)
SOIC ...........................................................470mW
Operating Temperature Range
C Device ..............................................0
°
C to 70
°
C
E Device .......................................– 40
°
C to +85
°
C
Storage Temperature Range ................– 65
°
C to +165
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
*This is a stress ratings only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of
the specifications is not implied. Exposure to Absolute Maximum Rating
Conditions for extended periods may affect device reliability.
**The output may be shorted to NEGOUT or GND if the package power
dissipation is not exceeded. Typical short circuit current to GND is 50mA.
ELECTRICAL CHARACTERISTICS:
V
IN
between +5V and +10V; V
OUT
= – 4.1V; R
L
= Open Circuit; T
A
= T
MIN
to
T
MAX
unless otherwise noted. A 100kHz, 50% duty cycle square wave
between GND and V
IN
is applied to the OSC pin of the TCM852.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IN
V
OUT
Supply Voltage
Output Voltage
Note 1
TCM850-TCM852: V
FB
= 0V (Note 3)
TCM853: V
CTRL
= 4.1V
5
—
10
– 3.9
– 4
V
V
– 4.3
– 4.2
– 4.1
—
Output Voltage Range
Set Voltage
Supply Current
Shutdown Supply Current
– 0.5 to – (V
IN
–1)
– 1.28
2
0.5
2
0.5
4
3
2
1
100
—
—
—
10
V
V
V
FBSET
I
Q
I
SHUT
TCM850-852: No Load
– 1.32
—
—
—
—
—
—
—
—
80
2
—
—
—
– 1.24
3
—
—
—
8
8
—
—
120
—
0.5
±
1
—
mA
μ
A
TCM850/853: V
IN
= 10V, SHDN = 0V
TCM851: SHDN = 2V
TCM852: OSC Low
TCM850-TCM852: V
FB
= 0V (Note 3)
TCM853: V
CTRL
= 4.1V
TCM850-TCM852
TCM853
TCM850-TCM853: T
A
= 25
°
C (Note 2)
Pin 4
Pin 4
Pin 4
Pin 4
V
OUT
Load Regulation
mV/mA
V
OUT
Ripple
mVp-p
f
OSC
V
IH
V
IL
I
IN
C
IN
Oscillator Frequency
Input High Voltage
Input Low Voltage
Input Current
Input Capacitance
kHz
V
V
μ
A
pF
NOTES:
1. The supply voltage can drop to 4.5V, but the output is no longer guaranteed to sink 5mA at – 4.1V.
2. The TCM852 will operate with a 50kHz to 250kHz square wave of 40% to 60% duty cycle. For best performance, use an 80kHz to
120kHz square wave with 50% duty cycle.
3. I
OUT
= 0mA or 5mA. Reference Figures 3 and 5.
REGULATED GaAs FET BIAS SUPPLY
TCM850
TCM851
TCM852
TCM853
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