參數(shù)資料
型號(hào)： TCM680COA
廠(chǎng)商： TelCom Semiconductor, Inc.
英文描述： +5V TO 【10V VOLTAGE CONVERTER
中文描述： 5V至【10V的電壓轉(zhuǎn)換器
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 96K
代理商： TCM680COA
4-14
TELCOM SEMICONDUCTOR, INC.
TCM680
+5V TO
±
10V VOLTAGE CONVERTER
ABSOLUTE MAXIMUM RATINGS*
V
IN.....................................................................................................
+6.0V
V
+
V
V
–
V
+
V
IN
dV/dT.............................................................. 1V/
μ
sec
OUT..............................................................................................
+12.0V
–
– 12.0V
OUT
Short-Circuit Duration ............................Continuous
OUT
Current ............................................................75mA
Figure 1. Test Circuit
ELECTRICAL CHARACTERISTICS:
V
IN
= +5V, T
A
= +25
°
C, test circuit Figure 1, unless otherwise indicated.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Supply Voltage Range
Supply Current
MIN.
≤
T
A
≤
MAX., R
L
= 2k
V
IN
= 3V, R
L
=
∞
V
IN
= 5V, R
L
=
∞
V
IN
= 5V, 0
°
C
≤
T
A
≤
+70
°
C, R
L
=
∞
V
IN
= 5V, – 40
°
C
≤
T
A
≤
+85
°
C, R
L
=
∞
I
L
I
L
I
L
0
°
C
≤
T
A
≤
+70
°
C
– 40
°
C
≤
T
A
≤
+85
°
C
I
L
I
L
I
L
0
°
C
≤
T
A
≤
+70
°
C
– 40
°
C
≤
T
A
≤
+85
°
C
2.0
—
—
—
—
—
—
1.5 to 5.5
0.5
1
—
—
140
180
5.5
1
2
2.5
3
180
250
V
mA
Negative Charge Pump Output
Source Resistance
–
= 10mA, I
L
= 0mA, V
IN
= 5V
–
= 5mA, I
L
= 0mA, V
IN
= 2.8V
–
= 10mA, I
L
= 0mA, V
IN
= 5V:
—
—
—
—
—
—
140
180
220
250
180
250
Positive Charge Pump Output
Source Resistance
+
= 10mA, I
L
+
= 5mA, I
L
+
= 10mA, I
L
–
= 0mA, V
IN
= 5V
–
= 0mA, V
IN
= 2.8V
–
= 0mA, V
IN
= 5V:
—
—
—
—
97
97
—
—
21
85
99
99
220
250
—
—
—
—
F
OSC
P
EFF
V
OUT
E
FF
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
kHz
%
%
R
L
= 2k
V
+
V
–
, R
L
=
∞
OUT
, R
L
=
∞
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of
any circuits described herein and makes no representations that they are free from patent infringement.
Power Dissipation (T
A
≤
70
°
C)
Plastic DIP ......................................................730mW
Small Outline ..................................................470mW
Storage Temperature ............................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
C
1
C
1
C
2
C
3
C
2
V
IN
V
IN
V+
V+
V–
GND
GND
TCM680
4.7
μ
F
4.7
μ
F
10
μ
F
C
4
10
μ
F
8
7
6
5
4
3
2
1
V–
C
2
R
L
R
L
C
1
–
+
–
+
+
–
PIN DESCRIPTION
8-Pin
DIP/SOIC
Symbol
Description
1
2
3
4
5
6
7
8
C
1
C
2
C
2
V
–
OUT
GND
V
IN
C
1
V
+
OUT
–
Input. Capacitor C1 negative terminal.
Input. Capacitor C2 positive terminal.
Input. Capacitor C2 negative terminal.
Output. Negative output voltage (–2V
IN
).
Input. Device ground.
Input. Power supply voltage.
Input. Capacitor C1 positive terminal.
Output. Positive output voltage (+2V
IN
)
+
+
*Stresses above those listed in "Absolute Maximum Ratings" may cause
permanent damage to the device. These are stress ratings only and
functional operation of the device at these or other conditions above those
indicated in the operation section of the specification is not implied.
Exposure to the Absolute Maximum Ratings conditions for extended
periods of time may affect device reliability.
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