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參數(shù)資料
| 型號： | TCLT1106 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package |
| 中文描述： | 光耦，光電晶體管輸出，?？? 6L5，半間距，龍微型扁平封裝 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 205K |
| 代理商： | TCLT1106 |
www.vishay.com
2
Document Number 83514
Rev. 1.8, 03-Dec-04
TCLT11.. Series
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
T
j
Value
6
Unit
V
Reverse voltage
Forward current
60
mA
Forward surge current
t
p
≤
10
μ
s
1.5
A
Power dissipation
100
mW
Junction temperature
125
°C
Parameter
Test condition
Symbol
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
Value
70
Unit
V
Collector emitter voltage
Emitter collector voltage
7
V
Collector current
50
mA
Collector peak current
t
p
/T = 0.5, t
p
≤
10 ms
100
mA
Power dissipation
150
mW
Junction temperature
125
°C
Parameter
Test condition
Symbol
V
ISO
P
tot
T
amb
Value
5000
Unit
V
RMS
mW
Isolation test voltage (RMS)
Total power dissipation
250
Operating ambient temperature
range
Storage temperature range
- 40 to + 100
°C
T
stg
T
sld
- 40 to + 100
°C
Soldering temperature
240
°C
Parameter
Test condition
Symbol
V
F
C
j
Min
Typ.
1.25
Max
1.6
Unit
V
Forward voltage
I
F
= ± 50 mA
V
R
= 0 V, f = 1 MHz
Junction capacitance
50
pF
Parameter
Test condition
Symbol
V
CEO
V
ECO
I
CEO
Min
70
Typ.
Max
Unit
V
Collector emitter voltage
I
C
= 1 mA
I
E
= 100
μ
A
V
CE
= 20 V, I
f
= 0, E = 0
Emitter collector voltage
7
V
Collector-emitter cut-off current
10
100
nA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TCLT1106 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER SMD TRANSISTOR O/P |
| TCLT1107 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 80-160% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCLT1107 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER SMD TRANS O/P |
| TCLT1108 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 130-260% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCLT1108 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER SMD TRANS O/P |
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