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參數(shù)資料
| 型號(hào)： | TCET1200G |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Optocoupler, Phototransistor Output (Single, Dual Channel) |
| 中文描述： | 光耦，光電晶體管輸出（單，雙通道） |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 273K |
| 代理商： | TCET1200G |
www.vishay.com
2
Document Number 83501
Rev. 1.5, 26-Oct-04
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Order Information
G = Leadform 10.16 mm; G is not marked on the body
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Part
Remarks
TCET1200
CTR 50 - 600 %, DIP-4
TCET1201
CTR 40 - 80 %, DIP-4
TCET2200
CTR 50 - 600 %, DIP-8
TCET1202
CTR 63 - 125 %, DIP-4
TCET1203
CTR 100 - 200 %, DIP-4
TCET1204
CTR 160 - 320 %, DIP-4
TCET1200G
CTR 50 - 600 %, DIP-4
TCET1201G
CTR 40 - 80 %, DIP-4
TCET1202G
CTR 63 - 125 %, DIP-4
TCET1203G
CTR 100 - 200 %, DIP-4
TCET1204G
CTR 160 - 320 %, DIP-4
Parameter
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
T
j
Value
6
Unit
V
Reverse voltage
Forward current
60
mA
Forward surge current
t
p
≤
10
μ
s
1.5
A
Power dissipation
100
mW
Junction temperature
125
°C
Parameter
Test condition
Symbol
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
Value
70
Unit
V
Collector emitter voltage
Emitter collector voltage
7
V
Collector current
50
mA
Collector peak current
t
p
/T = 0.5, t
p
≤
10 ms
100
mA
Power dissipation
150
mW
Junction temperature
125
°C
Parameter
Test condition
Symbol
V
ISO
P
tot
T
amb
Value
5000
Unit
V
RMS
mW
Isolation test voltage (RMS)
Total power dissipation
250
Operating ambient temperature
range
Storage temperature range
- 40 to + 100
°C
T
stg
T
sld
- 55 to + 125
°C
Soldering temperature
2 mm from case t
≤
10 s
260
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TCET1201G | Optocoupler, Phototransistor Output (Single, Dual Channel) |
| TCET1202G | Optocoupler, Phototransistor Output (Single, Dual Channel) |
| TCET1203G | Optocoupler, Phototransistor Output (Single, Dual Channel) |
| TCET1204G | Optocoupler, Phototransistor Output (Single, Dual Channel) |
| TCET1202G1 | Optocoupler with Phototransistor Output |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TCET1200G1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler with Phototransistor Output |
| TCET1201 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 40-80% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1201G | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 40-80% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1201G1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler with Phototransistor Output |
| TCET1202 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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