
TCED1100(G) up to TCED4100
Vishay Telefunken
Rev. A3, 11–Jan–99
235
Features
Approvals:
BSI
: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
FIMKO
(SETI): EN 60950,
Certificate number 11992
U
nderwriters
L
aboratory (UL) 1577 recognized,
file number E-76222 – Double Protection
CSA
(C–UL) 1577 recognized,
file number E-76222 – Double Protection
VDE
0884, Certificate number 115667
VDE 0884 related features:
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
Isolation test voltage
(partial discharge test voltage) V
pd
= 1.6 kV
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Coupler
Parameter
AC isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
Creepage current resistance according to
VDE 0303/IEC 112
C
omparative
T
racking
I
ndex:
CTI
≥
175
Thickness through insulation
≥
0.75 mm
Internal creepage distance > 4 mm
General features:
Isolation materials according to UL94-VO
Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
Climatic classification 55/100/21 (IEC 68 part 1)
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high
C
ommon
M
ode
R
ejection
Low temperature coefficient of CTR
G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCED2100/ TCED4100 optional;
suffix letter ‘G’ is not marked on the optocoupler
Coupling System U
Test Conditions
Symbol
V
R
I
F
I
FSM
P
V
T
j
Value
6
60
1.5
100
125
Unit
V
mA
A
mW
C
t
p
≤
10 s
T
amb
≤
25 C
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
Value
35
7
80
100
150
125
Unit
V
V
mA
mA
mW
C
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
25 C
Test Conditions
t = 1 min
T
amb
≤
25 C
Symbol
V
IO
P
tot
T
amb
T
stg
T
sd
Value
5
250
Unit
kV
mW
C
C
C
–40 to +100
–55 to +125
260
2 mm from case t
≤
10 s