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參數(shù)資料
| 型號： | TCDT1123G |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Optocoupler with Phototransistor Output |
| 中文描述： | 與光電晶體管光電耦合器輸出 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 158K |
| 代理商： | TCDT1123G |
TCDT1120(G) Series
Vishay Telefunken
Rev. A3, 11–Jan–99
225
Features
Approvals:
BSI
: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
FIMKO
(SETI): EN 60950,
Certificate number 12399
U
nderwriters
L
aboratory (UL) 1577 recognized,
file number E-76222
VDE
0884, Certificate number 94778
VDE 0884 related features:
Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV peak
Isolation test voltage (partial discharge test
voltage) V
pd
= 1.6 kV
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
Creepage current resistance according to
VDE 0303/IEC 112
C
omparative
T
racking
I
ndex:
CTI
= 275
Thickness through insulation
≥
0.75 mm
General features:
Isolation materials according to UL94-VO
Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)
Climatic classification 55/100/21 (IEC 68 part 1)
Special construction:
Therefore, extra low coupling capacity of
typical 0.3 pF, high
C
ommon
M
ode
R
ejection
Low temperature coefficient of CTR
Base not connected
CTR offered in 4 groups
Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Output (Detector)
Parameter
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Coupler
Parameter
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Test Conditions
Symbol
V
R
I
F
I
FSM
P
V
T
j
Value
5
60
3
100
125
Unit
V
mA
A
mW
C
t
p
≤
10 s
T
amb
≤
25 C
Test Conditions
Symbol
V
CBO
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
Value
90
90
7
50
100
150
125
Unit
V
V
V
mA
mA
mW
C
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
25 C
Test Conditions
Symbol
V
IO
P
tot
T
amb
T
stg
T
sd
Value
3.75
250
Unit
kV
mW
C
C
C
t = 1 min
T
amb
≤
25 C
–55 to +100
–55 to +125
260
2 mm from case, t
≤
10 s
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| TCDT1124 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCDT1124 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| TCDT1124G | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCDT1DW | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:1.0A Sintered Glass Passivated Standard Rectifier |
| TCDT1GW | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:1.0A Sintered Glass Passivated Standard Rectifier |
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