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參數(shù)資料
| 型號： | TC9491BCZM |
| 廠商： | TelCom Semiconductor, Inc. |
| 英文描述： | LOW POWER, BANDGAP VOLTAGE REFERENCES |
| 中文描述： | 低功耗，帶隙電壓參考 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | TC9491BCZM |
3-16
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Forward Current .................................................... +10mA
Reverse Current.................................................... +30mA
Storage Temperature Range ................– 65
°
C to +150
°
C
Operating Temperature Range
TO-92 Package .....................................0
°
C to +70
°
C
COA Surface Mount Package ...............0
°
C to +70
°
C
Lead Temperature (Soldering, 10 sec)
TO-92 Package ..............................................+300
°
C
COA Surface Mount Package ........................+300
°
C
Power Dissipation
Limited by Forward/Reverse Current
*Functional operation above the absolute maximum stress ratings is not
implied.
TC9491
OUTPUT
INPUT
36 k
RESPONSE TIME TEST CIRCUIT
ELECTRICAL CHARACTERISTICS:
T
A
= +25
°
C, unless otherwise specified.
TC9491A
Typ
TC9491B
Typ
Symbol
Parameter
Test Conditions
Min
Max
Min
Max
Unit
V
(BR)R
Reverse Breakdown Voltage
T
A
= 0
°
C to +70
°
C
Minimum Operating Current
T
A
= +25
°
C
T
A
= 0
°
C to +70
°
C
Reverse Breakdown Voltage
Change with Current
I
Rmin
= I
R
= 1.0mA, T
A
= +25
°
C
T
A
= 0
°
C to +70
°
C
1.0mA = I
R
= 20mA, T
A
= +25
°
C
T
A
= 0
°
C to +70
°
C
Reverse Dynamic Impedance
Average Temperature Coefficient
Long Term Stability
I
R
≤
20mA
1.200
1.180
1.22
—
1.250
1.290
1.200
1.219
1.220
—
1.250
1.260
V
I
RMIN
μ
A
—
—
8.0
—
15
20
—
—
8.0
—
15
20
V
(BR)R
—
—
—
—
—
—
—
—
—
—
—
0.6
—
20
1.0
1.5
10
20
—
50
—
—
—
—
—
—
—
—
—
—
—
—
0.6
—
20
1.0
1.5
20
25
—
100
—
mV
Z
V
(BR)
/
T
S
I
R
= 100
μ
A
10
μ
A = I
R
= 20mA
I
R
= 100
μ
A,
T
A
= +25
°
C
±
0.1
°
C
ppm/
°
C
ppm/kHR
LOW POWER, BANDGAP
VOLTAGE REFERENCES
TC9491A
TC9491B
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