參數(shù)資料
型號: TC7WB126FK
廠商: Toshiba Corporation
英文描述: TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
中文描述: 東芝的CMOS數(shù)字集成電路硅單片
文件頁數(shù): 3/6頁
文件大小: 98K
代理商: TC7WB126FK
TC7WB126FK
2001-09-17
3
Electrical Characteristics
DC Characteristics
(Ta 40~85°C)
Characteristics
Symbol
Test Condition
V
CC
(V)
Min
Typ.
(Note1)
Max
Unit
“H” level
V
IH
4.5~5.5
2.0
Input voltage
“L” level
V
IL
4.5~5.5
0.8
V
Input leakage current
I
IN
V
IN
0~5.5 V
4.5~5.5
1.0
A
Power off leakage current
I
OFF
A, B, OE 0~5.5 V
0
1.0
A
Off-state leakage current
(switch off)
I
SZ
A, B 0~5.5 V, OE GND
4.5~5.5
1.0
A
I
IS
30 mA
4.5
5
7
V
IS
0 V
I
IS
64 mA
4.5
5
7
ON resistance
(Note2)
R
ON
V
IS
2.4 V, I
IS
15 mA
4.5
10
15
I
CC
V
IN
V
CC
or GND
I
OUT
0
5.5
10
A
Quiescent supply current
I
CC
V
IN
3.4 V (one input)
5.5
2.5
mA
Note1: Typical values are at V
CC
5 V and Ta 25 C.
Note2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On
resistance is determined by the lower of the voltages on the two (A or B) pins.
AC Characteristics
(Ta 40~85°C)
Characteristics
Symbol
Test Condition
V
CC
(V)
Min
Max
Unit
Propagation delay time
(bus to bus)
t
pLH
t
pHL
t
pZL
Figure 1, Figure 2
(Note3)
4.5
0.25
ns
Output enable time
t
pZH
Figure 1, Figure 3
4.5
4.0
ns
Output disable time
t
pLZ
t
pHZ
Figure 1, Figure 3
4.5
5.5
ns
Note3: The propagation delay time is calculated by the RC (on-resistance and load capacitance) time constant.
Capacitive Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
V
CC
(V)
Typ.
Unit
Control pin input capacitance
C
IN
(Note4)
5.0
3
pF
Switch terminal capacitance
C
I/O
OE GND
(Note4)
5.0
10
pF
Note4: This item is guaranteed by design.
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