參數(shù)資料
型號(hào)： TC7MA245FK
廠商： Toshiba Corporation
元件分類(lèi)： 通用總線功能
英文描述： TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
中文描述： 東芝的CMOS數(shù)字集成電路硅單片
文件頁(yè)數(shù)： 4/10頁(yè)
文件大小： 151K
代理商： TC7MA245FK
TC7MA245FK
2001-10-23
4
Electrical Characteristics
DC Characteristics
(Ta
=
40~85°C, 2.7 V
<
V
CC
<
=
3.6 V)
Characteristics
Symbol
Test Condition
V
CC
(V)
Min
Max
Unit
High level
V
IH
2.7~3.6
2.0
Input voltage
Low level
V
IL
2.7~3.6
0.8
V
I
OH
=
100
μ
A
2.7~3.6
V
CC
0.2
I
OH
=
12 mA
2.7
2.2
I
OH
=
18 mA
3.0
2.4
High level
V
OH
V
IN
=
V
IH
or V
IL
I
OH
=
24 mA
3.0
2.2
I
OL
=
100
μ
A
2.7~3.6
0.2
I
OL
=
12 mA
2.7
0.4
I
OL
=
18 mA
3.0
0.4
Output voltage
Low level
V
OL
V
IN
=
V
IH
or V
IL
I
OL
=
24 mA
3.0
0.55
V
Input leakage current
I
IN
V
IN
=
0~3.6 V
2.7~3.6
±
5.0
μ
A
3-state output off-state current
I
OZ
V
IN
=
V
IH
or V
IL
V
OUT
=
0~3.6 V
2.7~3.6
±
10.0
μ
A
Power off leakage current
I
OFF
V
IN
, V
OUT
=
0~3.6 V
0
10.0
μ
A
V
IN
=
V
CC
or GND
V
CC
<
(V
IN
, V
OUT
)
<
3.6 V
2.7~3.6
20.0
Quiescent supply current
I
CC
2.7~3.6
±
20.0
Increase in I
CC
per input
I
CC
V
IH
=
V
CC
0.6
V
2.7~3.6
750
μ
A
DC Characteristics
(Ta
=
40~85°C, 2.3 V
<
=
V
CC
<
=
2.7 V)
Characteristics
Symbol
Test Condition
V
CC
(V)
Min
Max
Unit
High level
V
IH
2.3~2.7
1.6
Input voltage
Low level
V
IL
2.3~2.7
0.7
V
I
OH
=
100
μ
A
2.3~2.7
V
CC
0.2
I
OH
=
6 mA
2.3
2.0
I
OH
=
12 mA
2.3
1.8
High level
V
OH
V
IN
=
V
IH
or V
IL
I
OH
=
18 mA
2.3
1.7
I
OL
=
100
μ
A
2.3~2.7
0.2
I
OL
=
12 mA
2.3
0.4
Output voltage
Low level
V
OL
V
IN
=
V
IH
or V
IL
I
OL
=
18 mA
2.3
0.6
V
Input leakage current
I
IN
V
IN
=
0~3.6 V
2.3~2.7
±
5.0
μ
A
3-state output off-state current
I
OZ
V
IN
=
V
IH
or V
IL
V
OUT
=
0~3.6 V
2.3~2.7
±
10.0
μ
A
Power off leakage current
I
OFF
V
IN
,
V
OUT
=
0~3.6 V
0
10.0
μ
A
V
IN
=
V
CC
or GND
V
CC
<
(V
IN
, V
OUT
)
<
3.6 V
2.3~2.7
20.0
Quiescent supply current
I
CC
2.3~2.7
±
20.0
μ
A
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