參數(shù)資料
型號(hào)： TC74AC393
廠(chǎng)商： Toshiba Corporation
元件分類(lèi)： 通用總線(xiàn)功能
英文描述： CMOS Dual Binary Counter(CMOS雙路二進(jìn)制計(jì)數(shù)器)
中文描述： CMOS雙二進(jìn)制計(jì)數(shù)器（的CMOS雙路二進(jìn)制計(jì)數(shù)器）
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 212K
代理商： TC74AC393
2/3
TOSHIBA CORPORATION
TC74AC393
Absolute Maximum Ratings
Recommended Operating Conditions
DC Electrical Characteristics
* This spec indicates the capability of driving 50
transmission lines.
One output should be tested at a time for a 10ms maximum duration.
PARAMETER
SYMBOL
VALUE
UNIT
Supply Voltage Range
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current
DC V
CC
/Ground Current
Power Dissipation
Storage Temperature
Lead Temperature 10sec
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
T
L
-0.5~7.0
-0.5~V
CC
+ 0.5
-0.5~V
CC
+ 0.5
±
20
±
50
±
50
±
200
500 (DIP) */180 (SOP)
-65~150
300
V
V
V
mA
mA
mA
mA
mW
°
C
°
C
PARAMETER
SYMBOL
VALUE
UNIT
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
V
CC
V
IN
V
OUT
T
opr
2.0~5.5
0~V
CC
0~V
CC
-40~85
V
V
V
°
C
Input Rise and Fall Time
dt/dv
0~100 (V
CC
= 3.3
±
0.3V)
0~20 (V
CC
= 5
±
0.5V)
ns/v
PARAMETER
SYMBOL
TEST CONDITION
Ta = 25
°
C
Ta = -40~85
°
C
UNIT
V
CC
2.0
3.0
5.5
2.0
3.0
5.5
2.0
3.0
4.5
3.0
4.5
5.5
2.0
3.0
4.5
3.0
4.5
5.5
5.5
5.5
Min.
Typ.
Max.
Min.
Max.
High-Level Input Voltage
V
IH
—
1.50
2.10
3.85
—
—
—
1.9
2.9
4.4
2.58
3.94
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
3.0
4.5
—
—
—
0.0
0.0
0.0
—
—
—
—
—
—
—
—
0.50
0.90
1.65
—
—
—
—
—
—
0.1
0.1
0.1
0.36
0.36
—
±
0.1
8.0
1.50
2.10
3.85
—
—
—
1.9
2.9
4.4
2.48
3.80
3.85
—
—
—
—
—
—
—
—
—
—
—
0.50
0.90
1.65
—
—
—
—
—
—
0.1
0.1
0.1
0.44
0.44
1.65
±
1.0
80.0
V
Low-Level Input Voltage
V
IL
—
V
High-Level Output Voltage
V
OH
V
IN
= V
IH or
V
IL
I
OH
= -50
μ
A
V
I
OH
= -4mA
I
OH
= -24mA
I
OH
= -75mA*
Low-Level Output Voltage
V
OL
V
IN
= V
IH or
V
IL
I
OL
= 50
μ
A
V
I
OL
=12mA
I
OL
= 24mA
I
OL
= 75mA*
Input Leakage Current
Quiescent Supply Current
I
IN
I
CC
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
μ
A
* 500mW in the range of Ta = -40
°
C~65
°
C.
From Ta = 65
°
C to 85
°
C a derating factor of
-10mW/
°
C should be applied up to 300mW.
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