參數(shù)資料
型號: TC74AC367FT
廠商: Toshiba Corporation
英文描述: CMOS Digital Integrated Circuit Silicon Monolithic Hex Bus Buffer (3-state)
中文描述: CMOS數(shù)字集成電路硅單片六角總線緩沖器(三態(tài))
文件頁數(shù): 2/9頁
文件大小: 274K
代理商: TC74AC367FT
TC74AC367P/F/FN/FT
2007-10-01
2
Pin Assignment
IEC Logic Symbol
Truth Table
Inputs
Output
G
A
Y
L
L
L
L
H
H
H
X
Z
X: Don’t care
Z: High impedance
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
V
CC
0.5 to 7.0
V
DC input voltage
V
IN
0.5 to V
CC
+ 0.5
V
DC output voltage
V
OUT
0.5 to V
CC
+ 0.5
V
Input diode current
I
IK
±20
mA
Output diode current
I
OK
±50
mA
DC output current
I
OUT
±50
mA
DC V
CC
/ground current
I
CC
±150
mA
Power dissipation
P
D
500 (DIP) (Note 2)/180 (SOP/TSSOP)
mW
Storage temperature
T
stg
65 to 150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta =
40 to 65°C. From Ta = 65 to 85°C a derating factor of
10 mW/°C should be
applied up to 300 mW.
V
CC
12
6Y
5A
5Y
11
10
9
16
1
G
1
2
3
4
5
6
7
3A
3Y
GND
1A
4A
8
6A
15
4Y
2
G
2A
2Y
14
1Y
13
(top view)
(15)
(12)
(14)
6A
(11)
(13)
6Y
EN
5Y
5A
2
G
(1)
(2)
(4)
(6)
(10)
2A
3A
4A
(3)
(5)
(7)
(9)
2Y
3Y
4Y
EN
1Y
1A
1
G
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