參數(shù)資料
型號(hào)： TC649VUATR
元件分類： 運(yùn)動(dòng)控制電子
英文描述： BRUSHLESS DC MOTOR CONTROLLER, PDSO8
封裝： PLASTIC, MSOP-8
文件頁(yè)數(shù)： 5/28頁(yè)
文件大?。?/td> 478K
代理商： TC649VUATR
2002 Microchip Technology Inc.
DS21449C-page 13
TC649
Table 5-2 gives examples of some commonly available
transistors and MOSFETs. This table should be used
as a guide only since there are many transistors and
MOSFETs which will work just as well as those listed.
The critical issues when choosing a device to use as
Q1 are: (1) the breakdown voltage (V(BR)CEO or VDS
(MOSFET)) must be large enough to withstand the
highest voltage applied to the fan (Note: This will occur
when the fan is off); (2) 5 mA of base drive current must
be enough to saturate the transistor when conducting
the full fan current (transistor must have sufficient
gain); (3) the VOUT voltage must be high enough to suf-
ficiently drive the gate of the MOSFET to minimize the
RDS(on) of the device; (4) rated fan current draw must
be within the transistor's/MOSFET's current handling
capability; and (5) power dissipation must be kept
within the limits of the chosen device.
FIGURE 5-6:
Output Drive Transistor Circuit Topologies.
TABLE 5-2:
TRANSISTORS AND MOSFETS FOR Q1 (VDD = 5V)
Device
Package
Max. VBE(sat)/VGS
(V)
Min. HFE
VCEO/VDS
(V)
Fan Current
(mA)
Suggested
RBASE ()
MMBT2222A
SOT-23
1.2
50
40
150
800
MPS2222A
TO-92
1.2
50
40
150
800
MPS6602
TO-92
1.2
50
40
500
SI2302
SOT-23
2.5
NA
20
500
MGSF1N02E
SOT-23
2.5
NA
20
500
SI4410
SO-8
4.5
NA
30
1000
SI2308
SOT-23
4.5
NA
60
500
Note 1
Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.
Q1
Q2
GND
VDD
RSENSE
RBASE
VOUT
VOUT
Fan
a) Single Bipolar Transistor
Q1
GND
VDD
RSENSE
VOUT
C) N-Channel MOSFET
GND
VDD
RSENSE
RBASE
Fan
b) Darlington Transistor Pair
Fan
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