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參數(shù)資料
| 型號(hào)： | TC595002ECB |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | Low Dropout, Negative Output Voltage Regulator |
| 中文描述： | 低壓差，負(fù)輸出電壓穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 4/20頁(yè) |
| 文件大?。?/td> | 570K |
| 代理商： | TC595002ECB |
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TC59
DS21438B-page 4
2002 Microchip Technology Inc.
4.0
THERMAL CONSIDERATIONS
4.1
Power Dissipation
The amount of power dissipated internal to the low drop
out linear regulator is the sum of the power dissipation
within the linear pass device (P-Channel MOSFET),
and the quiescent current required to bias the internal
reference and error amplifier. The internal linear pass
device power dissipation is calculated multiplying the
voltage across the linear device times the current
through the device. The input and output voltages are
negative for the TC59. The power dissipation is
calculated using the absolute value of the voltage
difference between the input and output voltage.
TABLE 4-1:
MAXIMUM POWER
DISSIPATION
EQUATION 4-1:
The internal power dissipation as a result of the bias
current for the LDO internal reference and error
amplifier is calculated by multiplying the ground or
quiescent current times the input voltage.
EQUATION 4-2:
The total internal power dissipation is the sum of
Equation 4-1 and Equation 4-2.
EQUATION 4-3:
For the TC59, the internal quiescent bias current is so
low (3
μ
A typical), the P
D
(Bias) term of the power
dissipation equation can be ignored. The maximum
power dissipation can be estimated by using the
maximum input voltage and the minimum output
voltage to obtain a maximum voltage differential
between input and output and multiplying the maximum
voltage differential by the maximum output current.
EQUATION 4-4:
For example, given the following conditions:
V
IN
V
OUT
I
OUT
T
AMBIENT (MAX)
= 55°C
P
MAX
P
MAX
To determine the junction temperature of the device,
the thermal resistance from junction to air must be
known. The SOT-23-3 R
θ
JA
is estimated to be
approximately 359°C/W when mounted on a 4-layer
board. The R
θ
JA
will vary with physical layout, airflow
and other application specific conditions.
= -7.0V ±5%
= -5.0V ±2%
= 1mA to 40mA
= (7V X (1.05) – (5.0V X 0.98)) X 40mA
= 98.0 milli-Watts
The device junction temperature is determined by
calculating
the
junction
ambient,
then
adding
the
temperature.
temperature
rise
rise
the
above
ambient
to
EQUATION 4-5:
JUNCTION
TEMPERATURE
(SOT-23 EXAMPLE)
Package Type
Maximum Power
Dissipation
SOT-23-3
150mW
P
D
(Pass Device) = (V
IN
– V
OUT
) X I
OUT
P
D
(Bias) = V
IN
X I
GND
P
TOTAL
= P
D
(Pass Device) + P
D
(Bias)
P
MAX
= (V
IN (MAX)
– V
OUT (MIN)
) X I
OUT (MAX)
T
JUNCTION
= P
D (MAX)
X R
θ
JA
+ T
AMBIENT
T
JUNCTION
= 98.0 milli-Watts X 359°C/W + 55°C
T
JUNCTION
= 90.2°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC595002ECBTR | 功能描述:低壓差穩(wěn)壓器 - LDO 5V LDO Neg Output RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| TC595002ECBTR-CUT TAPE | 制造商:Microchip 功能描述:TC5950 Series 100 mA -5 V LDO Negative Output Voltage Regulator -SOT-23A-3 |
| TC59A | 制造商:CDE 制造商全稱(chēng):Cornell Dubilier Electronics 功能描述:Axial Leaded Aluminum Electrolytic Capacitors |
| TC59LM806CFT50 | 制造商:Toshiba America Electronic Components 功能描述: |
| TC59LM806CFT-50 | 制造商:Toshiba America Electronic Components 功能描述:DRAM Chip DDR FCRAM 256M-Bit 32Mx8 2.5V 66-Pin TSOP-II |
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