參數(shù)資料
型號： TC58FVT321-10
廠商： Toshiba Corporation
英文描述： 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS閃速存儲(chǔ)器)
中文描述： 32兆位（4米× 8位）的CMOS閃存（4米× 8位的CMOS閃速存儲(chǔ)器）
文件頁數(shù)： 2/46頁
文件大?。?/td> 518K
代理商： TC58FVT321-10
TC58FVT321/B321FT-10
2000-08-30 2/46
BLOCK DIAGRAM
BY
/
RY
Buffer
Data Latch
Control Circuit
Command Register
I/O Buffer
Memory Cell
Array
Bank 0
A
A
V
DD
V
SS
DQ0
BY
/
RY
DQ15
WE
BYTE
RESET
CE
OE
A0
A20
A-1
/ACC
WP
Memory Cell
Array
Bank 8
Memory Cell
Array
Bank 7
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EBA2
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