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TC57
DS21437B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage ........................................................+12V
Output Current ....................................................50mA
Output Voltage............................. -0.3V to (V
IN
+ 0.3V)
Power Dissipation.............................................150mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature Range..............-40°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC55 ELECTRICAL SPECIFICATIONS
TC57EP3002 Electrical Characteristics:
SHDN = GND, V
IN
= V
OUT
+ 1V, V
OUT
= 3V to 5V, I
OUT
= 0, T
A
= 25°C, Test Circuit of
Figure 3-1, unless otherwise noted.
(Note 2)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
V
EXT
V
OUT
V
OUT
V
IN
- V
OUT
I
DD
I
SHDN
V
OUT
/
V
IN
Input Voltage
Voltage on EXT Output
Output Voltage
Load Regulation
Dropout Voltage
Supply Current
Shutdown Supply Current
Line Regulation
—
—
—
—
8
8
V
V
V
0.98
X
V
R
V
R
±0.5% 1.02
X
V
R
-60
—
—
100
—
50
—
—
—
0.1
I
OUT
= 50mA
(Note 1)
1mA
≤
I
OUT
≤
100mA
(Note 3)
I
OUT
= 100mA
(Note 2)
V
SHDN
= V
IN
= 5V
V
SHDN
= GND
I
OUT
= 50mA, 4V
≤
V
IN
≤
8V
(Note 3
)
I
OUT
= 10mA, -40°C <
T
J
< +
85°C
(Note 3)
60
—
80
0.6
0.3
mV
mV
μ
A
μ
A
%/V
V
OUT
/
T
V
OUT
Temperature Coefficient
—
±100
—
ppm/°C
I
LEXT
I
EXT
V
IH
V
IL
I
IH
I
IL
Note
EXT Pin Leakage Current
EXT Sink Current
SHDN Input High Logic Threshold
SHDN Input Low Logic Threshold
SHDN Input Current @ V
IH
SHDN Input Current @ V
IL
V
is the regulator output voltage setting.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a
1V differential.
Varies with type of pass transistor used. Numbers shown are for the test circuit of Figure 3-1.
The product of I
EXTX
V
EXT
must be less than the maximum allowable power dissipation.
—
—
1.5
—
—
-0.2
—
—
—
—
—
0.5
25
—
0.25
0.1
0
μ
A
mA
V
V
μ
A
μ
A
Note 4
V
SHDN
= V
IN
= 5V
V
SHDN
= GND
-0.05
1:
2:
3:
4: