TC4864
2
TC4864-1 12/20/00
300mW Audio Power Amplifier with Shutdown Mode
2001 Microchip Technology Inc.
DS21483A
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ........................................................... 6.0V
Storage Temperature ............................. –65
°C to +150°C
Input Voltage ..................................... –0.3V to VDD + 0.3V
Power Dissipation ................................................ (Note 3)
ESD Susceptibility(Note 4) ..................................... 3500V
ESD Susceptibility (Note 5) .......................................250V
Junction Temperature ............................................. 150
°C
Soldering Information:
Small Outline Package
Vapor Phase (60 sec.) .................................. 215
°C
Infrared (15 sec.) ........................................... 220
°C
Thermal Resistance
θJC (MSOP) .......................................................... 56°C/W
θJA (MSOP) ........................................................ 210°C/W
Operating Ratings
Temperature Range
TMIN ≤ TA ≤ TMAX................... –40°C ≤ TA ≤ +85°C
Supply Voltage ..................................... 2.7V
≤ VDD ≤ 5.5V
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS: (Notes 1 and 2)
The following specifications apply for VDD = 5V unless otherwise specified. Limits apply for TA = 25°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
IDD
Quiescent Power Supply Current
VIN = 0V, IO = 0A (Note 8)
—
4.1
9
mA
ISD
Shutdown Current
VPIN1 = VDD
—
0.1
1
A
VOS
Output Offset Voltage
VIN = 0V
—
5
30
mV
PO
Output Power
THD + N = 1% (max); f = 1kHz;
300
740
—
mW
RL = 8 (Note 9)
THD+N = 1%(max); f=1kHz;
—
590
—
mW
RL = 16
THD+N
Total Harmonic Distortion+Noise
PO = 300mW; AVD = 2; RL = 8;
—
0.1
—
%
20Hz
≤ f ≤ 20kHz
PSRR
Power Supply Rejection Ratio
VDD = 4.9V –5.1V
55
75
dB
VIH
Shutdown High Level Input Voltage
2.5
—
V
VIL
Shutdown Low Level Input Voltage
—
0.8
V
ELECTRICAL CHARACTERISTICS: (Notes 1 and 2)
The following specifications apply for VDD = 3V unless otherwise specified. Limits apply for TA = 25°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
IDD
Quiescent Power Supply Current
VIN = 0V, IO = 0A (Note 8)
—
2.8
6.5
mA
ISD
Shutdown Current
VPIN1 = VDD
—
0.1
1
A
VOS
Output Offset Voltage
VIN = 0V
—
5
—
mV
PO
Output Power
THD = 1% (max); f = 1 kHz; RL = 8
—
240
—
mW
THD = 1% (max); f = 1 kHz; RL = 16
—
200
—
mW
THD+N
Total Harmonic Distortion+Noise
PO = 100 mW; AVD = 2; RL = 8;
—
0.1
—
%
20Hz
≤ f ≤ 20kHz
PSRR
Power Supply Rejection Ratio
VDD = 2.9V –3.1V
55
75
—
dB
VIH
Shutdown High Level Input Voltage
1.6
—
V
VIL
Shutdown Low Level Input Voltage
—
0.8
V