參數(shù)資料
型號: TC4426
廠商: TelCom Semiconductor, Inc.
英文描述: 1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS
中文描述: 1.5A的雙高速,功率MOSFET驅(qū)動器
文件頁數(shù): 2/6頁
文件大小: 75K
代理商: TC4426
4-246
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B. (V
DD
+ 0.3V) to (GND – 5.0V)
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
Package Thermal Resistance
CerDIP R
θ
J-A
................................................ 150
°
C/W
CerDIP R
θ
J-C
.................................................. 50
°
C/W
PDIP R
θ
J-A
................................................... 125
°
C/W
PDIP R
θ
J-C
..................................................... 42
°
C/W
SOIC R
θ
J-A
................................................... 155
°
C/W
SOIC R
θ
J-C
..................................................... 45
°
C/W
Operating Temperature Range
C Version ...............................................0
°
C to +70
°
C
E Version ..........................................– 40
°
C to +85
°
C
M Version .......................................– 55
°
C to +125
°
C
Package Power Dissipation (T
A
70
°
C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
T
A
= +25
°
C with 4.5V
V
DD
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
I
REV
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
– 1
0.8
1
V
V
μ
A
0V
V
IN
V
DD
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
V
DD
– 0.025
> 0.5
7
1.5
V
V
A
A
0.025
10
V
DD
= 18V, I
O
= 10 mA
Duty Cycle
2%, t
30
μ
sec
Duty Cycle
2%
t
30
μ
sec
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
I
S
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1
Figure 1
Figure 1
Figure 1
19
19
20
40
30
30
30
50
nsec
nsec
nsec
nsec
Power Supply Current
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
4.5
0.4
mA
mA
NOTE:
1. Switching times are guaranteed by design.
PIN CONFIGURATIONS
TC4426
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
NC = NO INTERNAL CONNECTION
NOTE:
SOIC pinout is identical to DIP.
TC4427
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
TC4428
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2,4
7,5
INVERTING
2,4
7,5
NONINVERTING
VDD
2
4
DIFFERENTIAL
7
5
VDD
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