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參數(shù)資料
| 型號： | TC4424EMF |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 3A Dual High-Speed Power MOSFET Drivers |
| 中文描述： | 第3A雙高速功率MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 3/18頁 |
| 文件大?。?/td> | 254K |
| 代理商： | TC4424EMF |
2004 Microchip Technology Inc.
DS21421D-page 3
TC4423/TC4424/TC4425
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
Supply Voltage................................................................+22V
Input Voltage, IN A or IN B
................................................(V
DD
+ 0.3V) to (GND – 5V)
Package Power Dissipation (T
A
≤
70°C)
DFN.........................................................................
Note 2
PDIP.......................................................................730 mW
SOIC.......................................................................470 mW
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
≤
V
DD
≤
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘
1
’, High Input Voltage
Logic ‘
0
’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
V
IH
V
IL
I
IN
2.4
—
–1
—
—
—
—
0.8
1
V
V
μA
0V
≤
V
IN
≤
V
DD
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
—
—
—
2.8
3.5
3
>1.5
—
V
V
A
A
0.025
5
5
—
—
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
Duty cycle
≤
2%, t
≤
300 μsec.
t
R
—
23
35
ns
Figure 4-1
,
Figure 4-2
,
C
L
= 1800 pF
Figure 4-1
,
Figure 4-2
,
C
L
= 1800 pF
Figure 4-1
,
Figure 4-2
,
C
L
= 1800 pF
Figure 4-1
,
Figure 4-2
,
C
L
= 1800 pF
Fall Time
t
F
—
25
35
ns
Delay Time
t
D1
—
33
75
ns
Delay Time
t
D2
—
38
75
ns
Power Supply
Power Supply Current
I
S
—
—
1.5
0.15
2.5
0.25
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1:
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
2:
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| TC4424EMF713 | 功能描述:功率驅(qū)動器IC 3A Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC4424EOE | 功能描述:功率驅(qū)動器IC 3A Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC4424EOE713 | 功能描述:功率驅(qū)動器IC 3A Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC4424EPA | 功能描述:功率驅(qū)動器IC 3A Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC4424EPA | 制造商:Microchip Technology Inc 功能描述:IC MOSFET DRIVER DUAL 4424 DIP8 |
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