參數(shù)資料
型號(hào): TC4423VOE
廠商: Microchip Technology Inc.
英文描述: 3A Dual High-Speed Power MOSFET Drivers
中文描述: 第3A雙高速功率MOSFET驅(qū)動(dòng)器
文件頁(yè)數(shù): 4/18頁(yè)
文件大小: 254K
代理商: TC4423VOE
TC4423/TC4424/TC4425
DS21421D-page 4
2004 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym
Max
Units
Conditions
Input
Logic ‘
1
’, High Input Voltage
Logic ‘
0
’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
V
IH
V
IL
I
IN
2.4
–10
0.8
+10
V
V
μA
0V
V
IN
V
DD
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
3.7
4.3
3.0
>1.5
V
V
A
A
0.025
8
8
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
Duty cycle
2%, t
300 μsec
t
R
28
60
ns
Figure 4-1
,
Figure 4-2
,
C
L
= 1800 pF
Figure 4-1
,
Figure 4-2
,
C
L
= 1800 pF
Figure 4-1
,
Figure 4-2
,
C
L
= 1800 pF
Figure 4-1
,
Figure 4-2
,
C
L
= 1800 pF
Fall Time
t
F
32
60
ns
Delay Time
t
D1
32
100
ns
Delay Time
t
D2
38
100
ns
Power Supply
Power Supply Current
I
S
2.0
0.2
3.5
0.3
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1:
Switching times ensured by design.
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
T
A
T
A
T
A
T
J
T
A
0
+70
+85
+125
+150
+150
°C
°C
°C
°C
°C
–40
–40
–65
θ
JA
33.2
°C/W
Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
Thermal Resistance, 16L-SOIC
θ
JA
θ
JA
125
155
°C/W
°C/W
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