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參數(shù)資料
| 型號： | TC255 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, CDIP8 |
| 封裝： | 2.54 MM PITCH, WINDOWED, CERAMIC, DIP-8 |
| 文件頁數(shù)： | 13/18頁 |
| 文件大?。?/td> | 242K |
| 代理商： | TC255 |
TC255
336-
× 244-PIXEL CCD IMAGE SENSOR
SOCS034C – FEBRUARY 1993 – REVISED NOVEMBER 1994
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
image-sensing area
Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are
shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are
generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate
is activated by the application of a burst of pulses every horizontal blanking interval. This prevents blooming
caused by the spilling of charge from overexposed elements into neighboring elements. To generate the dark
reference that is necessary in subsequent video-processing circuits for restoration of the video black level there
are 12 columns of elements on the left edge of the image-sensing area that are shielded from light. There is also
one column of elements on the right side of the image-sensing area and one line between the image-sensing
area and the image-clearing line.
ABG
IAG
10
m
Clocked Barrier
Virtual Barrier
Antiblooming Gate
Virtual Well
Clocked Well
Light
Antiblooming
Clocking Levels
Accumulated Charge
10
m
Figure 1. Charge-Accumulation Process
SAG
Channel Stops
Virtual Phase
Clocked Phase
Figure 2. Charge-Transfer Process
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