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參數(shù)資料
| 型號(hào)： | TC2117 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | D10 - BACKSHELL ENVIRON EMI-RFI 90 DEG M |
| 中文描述： | 800mA的低壓差固定正穩(wěn)壓器 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 447K |
| 代理商： | TC2117 |
TC2117
DS21665B-page 6
2002 Microchip Technology Inc.
4.0
TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Output Noise vs. Frequency
FREQUENCY (kHz)
N
μ
√
10.0
1.0
0.01
0.01
1
10
100
1000
0.1
0.0
V = 5V
I = 100mA
0.020
0.018
0.016
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0.014
TEMPERATURE (
°
C)
Line Regulation vs. Temperature
L
-40
°
C
0
°
C
0.0100
0.0090
0.0080
0.0070
0.0060
0.0050
0.0040
0.0030
0.0020
0.0010
0.0100
TEMPERATURE (
°
C)
Load Regulation vs. Temperature
L
1mA to 800mA
V
OUT
= 3V
V
OUT
= 2.5V
I
OUT
= 0.1mA
V
IN
= 3.5V to 6.0V
C
IN
= 1
μ
F
C = 1
μ
F
V = 6.0V
-40
°
C 0
°
C
25
°
C
70
°
C
85
°
C
125
°
C
25
°
C
70
°
C
85
°
C
125
°
C
0.600
0.550
0.500
0.450
0.400
0.350
0.300
0.250
0.200
0.150
0.100
0.050
0.000
0 100
200 300 400 500 600 700 800
I
LOAD
(mA)
Dropout Voltage vs. I
LOAD
D
TEMPERATURE (
°
C)
I
D
μ
A
3.030
3.020
3.010
3.000
2.990
2.980
2.970
2.960
2.950
2.940
2.930
2.920
3.0V V
OUT
vs. Temperature
V
O
150
135
120
105
90
75
60
45
30
15
0
I
DD
vs. Temperature
85
°
C
70
°
C
125
°
C
-40
°
C
0
°
C
25
°
C
I
LOAD
= 0.1mA
I
LOAD
= 300mA
I
LOAD
= 500mA
I
LOAD
= 800mA
V
OUT
= 2.5V
V
OUT
= 5V
I
OUT
= 0.1mA
V
OUT
= 3V
V
IN
= V
+1V
-40
°
C 0
°
C
25
°
C
70
°
C
85
°
C
125
°
C
TEMPERATURE (
°
C)
-40
°
C 0
°
C
25
°
C
70
°
C
85
°
C
125
°
C
Power Supply Rejection Ratio
FREQUENCY (Hz)
P
-70
-60
-50
-40
-30
-20
-10
10 100 1k
10k 100k 1M
I
INAC
= 50mVp-p
V
OUTDC
= 3V
C
OUT
= 10
μ
F Tantalum
V
OUT
I
OUT
= 300mA
V
IN
= 4.0V to 5.0V
C
OUT
= 10
μ
F Tantalum (0.25
ESR)
C
IN
= NA
Line Step Response
V
OUT
= 3.0V
C
IN
= 1
μ
F Ceramic
C
= 10
μ
F Tantalum (0.25
ESR)
I
OUT
= 6mA to 600mA
V
IN
= 4.0V
Load Step Response
V
INDC
= 4V
I
OUT
= 60mA
50mV/DIV
600mA/DIV
50mV/DIV
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