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參數(shù)資料
| 型號(hào)： | TC1427CPA |
| 廠商： | TelCom Semiconductor, Inc. |
| 英文描述： | 1.2A DUAL HIGH-SPEED MOSFET DRIVERS |
| 中文描述： | 1.2A的雙高速M(fèi)OSFET驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 81K |
| 代理商： | TC1427CPA |
4-208
TELCOM SEMICONDUCTOR, INC.
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
ELECTRICAL CHARACTERISTICS:
T
A
= 25
°
C with 4.5V
≤
V
DD+
≤
16V unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
Logic 1, Input Voltage
3
—
—
V
Logic 0, Input Voltage
—
—
0.8
V
Input Current
0V
≤
V
IN
≤
V
DD
– 1
—
1
μ
A
High Output Voltage
Test Figures 1 and 2
V
DD
– 0.025
—
—
—
V
Low Output Voltage
Test Figures 1 and 2
—
0.025
V
Output Resistance
V
IN
= 0.8V,
I
OUT
= 10 mA, V
DD
= 16V
V
IN
= 3V,
I
OUT
= 10 mA, V
DD
= 16V
—
12
18
—
8
12
I
PK
I
Peak Output Current
—
1.2
—
A
Latch-Up Current
Withstand Reverse Current
> 500
—
—
mA
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
Rise Time
Test Figures 1 and 2
—
—
35
nsec
Fall Time
Test Figures 1 and 2
—
—
25
nsec
Delay Time
Test Figures 1 and 2
—
—
75
nsec
Delay Time
Test Figures 1 and 2
—
—
75
nsec
I
S
Power Supply Current
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
—
—
—
—
9
mA
0.5
Note:
1. Switching times guaranteed by design.
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation (T
A
≤
70
°
C)
Plastic DIP ...........................................................730W
SOIC ................................................................470 mW
Derating Factor
Plastic DIP ..................................................... 8 mW/
°
C
SOIC .............................................................. 4 mW/
°
C
Supply Voltage ............................................................18V
Input Voltage, Any Terminal..
(V
DD
+ 0.3V) to (GND – 0.3V)
Operating Temperature: C Version..............0
°
C to +70
°
C
E Version.........– 40
°
C to +85
°
C
*Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Maximum Chip Temperature.................................+150
°
C
Storage Temperature .............................+65
°
C to +150
°
C
Lead Temperature (Soldering ,10 sec) .................+300
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC1426 | 1.2A DUAL HIGH-SPEED MOSFET DRIVERS |
| TC1426CPA | 1.2A DUAL HIGH-SPEED MOSFET DRIVERS |
| TC1427 | 1.2A DUAL HIGH-SPEED MOSFET DRIVERS |
| TC1428 | 1.2A DUAL HIGH-SPEED MOSFET DRIVERS |
| TC1428CPA | 1.2A DUAL HIGH-SPEED MOSFET DRIVERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC1427CPA | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC Rise Time:75nS |
| TC1427CPAG | 功能描述:功率驅(qū)動(dòng)器IC 1.2A Dual Lead Free Package RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC1427CUA | 功能描述:功率驅(qū)動(dòng)器IC 1.2A Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC1427CUA713 | 功能描述:功率驅(qū)動(dòng)器IC 1.2A Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC1427EPA | 功能描述:功率驅(qū)動(dòng)器IC 1.2A Dual MOSFET Drv Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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