參數(shù)資料
型號(hào)： TC1413CPA
廠商： TelCom Semiconductor, Inc.
英文描述： 3A HIGH-SPEED MOSFET DRIVERS
中文描述： 3A條高速M(fèi)OSFET驅(qū)動(dòng)器
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 68K
代理商： TC1413CPA
4-202
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(V
DD
+ 0.3V) to (GND – 5.0V)
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
Package Thermal Resistance
CerDIP R
θ
J-A
................................................ 150
°
C/W
CerDIP R
θ
J-C
.................................................. 50
°
C/W
PDIP R
θ
J-A
................................................... 125
°
C/W
PDIP R
θ
J-C
..................................................... 42
°
C/W
SOIC R
θ
J-A
................................................... 155
°
C/W
SOIC R
θ
J-C
..................................................... 45
°
C/W
Operating Temperature Range
C Version...............................................0
°
C to +70
°
C
E Version ..........................................– 40
°
C to +85
°
C
Power Dissipation (T
A
≤
70
°
C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
Over operating temperature range with 4.5V
≤
V
DD
≤
16V, unless other-
wise specified. Typical values are measured at T
A
= 25
°
C; V
DD
=16V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.0
—
– 1
– 10
—
—
—
—
—
0.8
1
10
V
V
μ
A
– 5V
≤
V
IN
≤
V
DD
T
A
= 25
°
C
– 40
°
C
≤
T
A
≤
85
°
C
Output
V
OH
V
OL
R
O
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
V
DD
= 16V, I
O
= 10 mA T
A
= 25
°
C
V
DD
– 0.025
—
—
—
—
—
0.5
—
—
2.7
3.3
3.3
3.0
—
—
V
V
0.025
4
5
5
—
—
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
I
PK
I
REV
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
V
DD
= 16V
Duty Cycle
≤
2%
t
≤
300
μ
sec
A
A
Switching Time
(Note 1)
t
R
Rise Time
Figure 1
T
A
= 25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
T
A
= 25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
T
A
= 25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
T
A
= 25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
—
—
—
—
—
—
—
—
—
—
—
—
20
22
24
20
22
24
35
40
40
35
40
40
28
33
33
28
33
33
45
50
50
45
50
50
nsec
t
F
Fall Time
Figure 1
nsec
t
D1
Delay Time
Figure 1
nsec
t
D2
Delay Time
Figure 1
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V
V
IN
= 0V
—
—
0.5
0.1
1.0
0.15
mA
NOTE:
1. Switching times are guaranteed by design.
V
DD
= 16V
V
DD
= 16V
3A HIGH-SPEED MOSFET DRIVERS
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