- 您現在的位置：買賣IC網 > PDF目錄361367 > TC1410NCPA (TelCom Semiconductor, Inc.) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | TC1410NCPA |
| 廠商： | TelCom Semiconductor, Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 65K |
| 代理商： | TC1410NCPA |
4-184
TELCOM SEMICONDUCTOR, INC.
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B. (V
DD
+ 0.3V) to (GND – 5.0V)
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
Package Thermal Resistance
CerDIP R
θ
J-A
................................................ 150
°
C/W
CerDIP R
θ
J-C
.................................................. 50
°
C/W
PDIP R
θ
J-A
................................................... 125
°
C/W
PDIP R
θ
J-C
..................................................... 42
°
C/W
SOIC R
θ
J-A
................................................... 155
°
C/W
SOIC R
θ
J-C
..................................................... 45
°
C/W
Operating Temperature Range
C Version...............................................0
°
C to +70
°
C
E Version ..........................................– 40
°
C to +85
°
C
Power Dissipation (T
A
≤
70
°
C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
Over operating temperature range with 4.5V
≤
V
DD
≤
16V, unless other-
wise specified. Typical values are measured at T
A
=25
°
C; V
DD
=16V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.0
—
– 1
– 10
—
—
—
—
—
0.8
1
10
V
V
μ
A
– 5V
≤
V
IN
≤
V
DD
– 40
°
C
≤
T
A
≤
85
°
C
T
A
= 25
°
C
Output
V
OH
V
OL
R
O
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
V
DD
= 16V, I
O
= 10mA
V
DD
– 0.025
—
—
—
—
—
—
0.5
—
—
16
20
20
0.5
—
V
0.025
22
28
28
—
—
V
T
A
=25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
I
PK
I
REV
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
V
DD
= 16V
Duty Cycle
≤
2%
t
≤
300
μ
sec
A
A
Switching Time
(Note 1)
t
R
Rise Time
Figure 1
T
A
= 25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
T
A
= 25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
T
A
= 25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
T
A
= 25
°
C
0
°
C
≤
T
A
≤
70
°
C
– 40
°
C
≤
T
A
≤
85
°
C
—
—
—
—
—
—
—
—
—
—
—
—
25
27
29
25
27
29
30
33
35
30
33
35
35
40
40
35
40
40
40
45
45
40
45
45
nsec
t
F
Fall Time
Figure 1
nsec
t
D1
Delay Time
Figure 1
nsec
t
D2
Delay Time
Figure 1
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V
V
IN
= 0V
V
DD
= 16V
—
—
0.5
0.1
1.0
0.15
mA
NOTE:
1. Switching times are guaranteed by design.
V
DD
= 16V
相關PDF資料 |
PDF描述 |
|---|---|
| TC1410EPA | 30V N-Channel PowerTrench MOSFET |
| TC1410 | 30V N-Channel PowerTrench MOSFET |
| TC1410CPA | 30V N-Channel PowerTrench MOSFET |
| TC1410N | 30V N-Channel PowerTrench MOSFET |
| TC1410EOA | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TC1410NEOA | 功能描述:功率驅動器IC .5A Sngl Drvr N-Inv SOIC8 RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC1410NEOA713 | 功能描述:功率驅動器IC .5A Sngl Drvr N-Inv SOIC8 RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC1410NEPA | 功能描述:功率驅動器IC .5A Sngl Drvr N-Inv PDIP8 RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC1410NEUA | 功能描述:功率驅動器IC .5A Sngl Drvr N-Inv MSOP8 RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC1410NEUA713 | 功能描述:功率驅動器IC .5A Sngl Drvr N-Inv MSOP8 RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。