• 參數(shù)資料
    型號(hào)： TC1301B-SFCVMF
    廠商： Microchip Technology Inc.
    英文描述： Dual LDO with Microcontroller RESET Function
    中文描述： 雙路LDO穩(wěn)壓器與微控制器的復(fù)位功能
    文件頁(yè)數(shù)： 17/28頁(yè)
    文件大?。?/td> 890K
    代理商： TC1301B-SFCVMF
    2005 Microchip Technology Inc.
    DS21798B-page 17
    TC1301A/B
    6.0
    APPLICATION CIRCUITS/
    ISSUES
    6.1
    Typical Application
    The TC1301A/B is used for applications that require
    the integration of two LDO’s and a microcontroller
    RESET.
    FIGURE 6-1:
    TC1301A/B.
    Typical Application Circuit
    6.1.1
    APPLICATION INPUT CONDITIONS
    6.2
    Power Calculations
    6.2.1
    The internal power dissipation within the TC1301A/B is
    a function of input voltage, output voltage, output
    current and quiescent current. The following equation
    can be used to calculate the internal power dissipation
    for each LDO.
    POWER DISSIPATION
    EQUATION 6-1:
    In addition to the LDO pass element power dissipation,
    there is power dissipation within the TC1301A/B as a
    result of quiescent or ground current. The power
    dissipation as a result of the ground current can be
    calculated using the following equation. The V
    IN
    pin
    quiescent current and the V
    DET
    pin current are both
    considered. The V
    IN
    current is a result of LDO
    quiescent current, while the V
    DET
    current is a result of
    the voltage detector current.
    EQUATION 6-2:
    The total power dissipated within the TC1301A/B is the
    sum of the power dissipated in both of the LDO’s and
    the P(I
    GND
    ) term. Because of the CMOS construction,
    the typical I
    GND
    for the TC1301A/B is 116 μA.
    Operating at a maximum of 4.2V results in a power
    dissipation of 0.5 milliWatts. For most applications, this
    is small compared to the LDO pass device power
    dissipation and can be neglected.
    The
    maximum
    continuous
    temperature specified for the TC1301A/B is 125
    °
    C
    .
    To
    estimate the internal junction temperature of the
    TC1301A/B, the total internal power dissipation is
    multiplied by the thermal resistance from junction to
    ambient (R
    θ
    JA
    ) of the device. The thermal resistance
    from junction to ambient for the 3X3DFN8 pin package
    is estimated at 41
    °
    C/W.
    operating
    junction
    EQUATION 6-3:
    Package Type = 3X3DFN8
    Input Voltage Range = 2.7V to 4.2V
    V
    IN
    maximum = 4.2V
    V
    IN
    typical = 3.6V
    V
    OUT1
    = 300 mA maximum
    V
    OUT2
    = 150 mA maximum
    System RESET Load = 10 k
    Ω
    8
    4
    1
    2
    3
    RESET
    GND
    V
    DET
    V
    IN
    7
    V
    OUT2
    6
    BATTERY
    C
    1 μF Ceramic
    X5R
    IN
    C
    TC1301A
    C
    OUT2
    1 μF Ceramic
    X5R
    C
    10 nF Ceramic
    Bypass
    2.7V
    to
    4.2V
    SHDN2
    ON/OFF Control V
    OUT2
    System RESET
    2.8V @ 300 mA
    1.8V
    @ 150 mA
    5
    V
    OUT1
    8
    4
    1
    2
    3
    RESET
    BATTERY
    C
    OUT1
    1 μF Ceramic
    X5R
    IN
    C
    TC1301B
    C
    1 μF Ceramic
    X5R
    Bypass
    V
    IN
    7
    2.7V
    to
    4.2V
    V
    OUT2
    6
    SHDN2
    ON/OFF Control V
    OUT2
    System RESET
    2.8V @ 300 mA
    1.8V
    @ 150 mA
    5
    ON/OFF Control V
    OUT1
    V
    OUT1
    GND
    SHDN1
    P
    LDO
    V
    IN MAX
    )
    )
    V
    OUT MIN
    )
    –
    (
    )
    I
    OUT MAX
    )
    )
    ×
    =
    P
    LDO
    = LDO Pass device internal power
    dissipation
    V
    IN(MAX)
    = Maximum input voltage
    V
    OUT(MIN)
    = LDO minimum output voltage
    P
    I GND
    )
    V
    IN MAX
    )
    I
    VIN
    I
    VDET
    +
    (
    )
    ×
    =
    P
    I(GND)
    = Total current in ground pin.
    V
    IN(MAX)
    = Maximum input voltage.
    I
    VIN
    = Current flowing in the V
    IN
    pin with no
    output current on either LDO output.
    I
    VDET
    = Current in the V
    DET
    pin with
    RESET loaded.
    T
    J MAX
    )
    P
    TOTAL
    R
    θ
    JA
    ×
    T
    AMAX
    +
    =
    T
    J(MAX)
    = Maximum continuous junction
    temperature.
    P
    TOTAL
    = Total device power dissipation.
    R
    θ
    JA
    = Thermal resistance from junction-to-
    ambient.
    T
    AMAX
    = Maximum ambient temperature.
    相關(guān)PDF資料
    PDF描述
    TC1301B-SFCVMFTR Dual LDO with Microcontroller RESET Function
    TC1301B-SFCVUA Dual LDO with Microcontroller RESET Function
    TC1301B-SFCVUATR Dual LDO with Microcontroller RESET Function
    TC1301B-UWAVMF Dual LDO with Microcontroller RESET Function
    TC1301B-UWAVMFTR Dual LDO with Microcontroller RESET Function
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    TC1301B-SFCVMFTR 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:Dual LDO with Microcontroller RESET Function
    TC1301B-SFCVUA 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:Dual LDO with Microcontroller RESET Function
    TC1301B-SFCVUATR 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:Dual LDO with Microcontroller RESET Function
    TC1301B-UWAVMF 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
    TC1301B-UWAVMFTR 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
    發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

    采購(gòu)需求

    (若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

    發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

    發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

    *型號(hào) *數(shù)量 廠商 批號(hào) 封裝
    添加更多采購(gòu)

    我的聯(lián)系方式

    *
    *
    *