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TC1301A/B
DS21798B-page 4
2005 Microchip Technology Inc.
Shutdown Supply Current
TC1301A
I
IN_SHDNA
—
58
90
μA
SHDN2 = GND, V
DET
= OPEN
Shutdown Supply Current
TC1301B
I
IN_SHDNB
—
0.1
1
μA
SHDN1 = SHDN2 = GND
Power Supply Rejection Ratio
PSRR
—
58
—
dB
f
≤
100 Hz, I
OUT1
= I
OUT2
= 50 mA,
C
IN
= 0 μF
nV/(Hz)
f
≤
1 kHz, I
OUT1
= I
OUT2
= 50 mA,
C
IN
= 0 μF
Output Noise
eN
—
830
—
Output Short-Circuit Current (Average)
V
OUT1
V
OUT2
SHDN Input High Threshold
I
OUTsc
I
OUTsc
V
IH
V
IL
—
200
—
mA
R
LOAD1
≤
1
Ω
R
LOAD2
≤
1
Ω
V
IN
= 2.7V to 6.0V
V
IN
= 2.7V to 6.0V
V
IN
= 5V, I
OUT1
= I
OUT2
= 30 mA,
See Figure 5-1
—
140
—
mA
45
—
—
%V
IN
%V
IN
SHDN Input Low Threshold
—
—
15
Wake-Up Time (From SHDN
mode), (V
OUT2
)
Settling Time (From SHDN mode),
(V
OUT2
)
Thermal Shutdown Die
Temperature
t
WK
—
5.3
20
μs
t
S
—
50
—
μs
V
IN
= 5V, I
OUT1
= I
OUT2
= 50 mA,
See Figure 5-2
T
SD
—
150
—
°C
V
IN
= 5V, I
OUT1
= I
OUT2
= 100 μA
Thermal Shutdown Hysteresis
T
HYS
—
10
—
°C
V
IN
= 5V
T
A
= 0°C to +70°C
T
A
= -40°C to +125°C
Voltage Range
V
DET
1.0
1.2
—
6.0
6.0
V
RESET Threshold
V
TH
-1.4
—
+1.4
%
-2.8
—
+2.8
%
T
A
= -40°C to +125°C
RESET Threshold Tempco
Δ
V
TH
/
Δ
T
—
30
—
ppm/°C
V
DET
RESET Delay
t
RPD
—
180
—
μs
V
DET
= V
TH
to (V
TH
– 100 mV),
See Figure 5-3
RESET Active Time-out Period
t
RPU
140
300
560
ms
V
DET
= V
TH
- 100 mV to V
TH
+ 100 mV,
I
SINK
= 1.2 mA,
See
Figure 5-3
.
V
DET
= V
THmin
, I
SINK
= 1.2 mA,
I
SINK
= 100 μA for V
DET
< 1.8V,
See Figure 5-3
RESET Output Voltage Low
V
OL
—
—
0.2
V
RESET Output Voltage High
V
OH
0.9
V
DET
—
—
V
V
DET
> V
THmax
, I
SOURCE
= 500 μA,
See Figure 5-3
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+1V, I
OUT1
=
I
OUT2
= 100 μA, C
IN
= 4.7 μF, C
OUT1
= C
OUT2
= 1 μF,
C
BYPASS
= 10 nF, SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note
1:
2:
3:
4:
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
R
+ V
DROPOUT
.
V
R
is defined as the higher of the two regulator nominal output voltages (V
OUT1
or V
OUT2
).
TCV
OUT
= ((V
OUTmax
- V
OUTmin
) * 10
6
)/(V
OUT
*
Δ
T).
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for
t = 10 ms.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its value
measured at a 1V differential.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown
.
5:
6:
7: