參數(shù)資料
型號(hào): TC1221ECH
廠商: Microchip Technology Inc.
元件分類(lèi): 基準(zhǔn)電壓源/電流源
英文描述: High Frequency Switched Capacitor Voltage Converters with Shutdown in SOT Packages
中文描述: 高頻開(kāi)關(guān)電容電壓轉(zhuǎn)換器與關(guān)機(jī)采用SOT封裝
文件頁(yè)數(shù): 6/16頁(yè)
文件大?。?/td> 462K
代理商: TC1221ECH
TC1221/TC1222
DS21367B-page 6
2002 Microchip Technology Inc.
Table 4-1 shows various values of C1 and the
corresponding output resistance values @ +25
°
C. It
assumes a 0.1
ESR
C1
and 2
R
SWITCH
. Table 4-2
shows the output voltage ripple for various values of
C2. The V
RIPPLE
values assume 10mA output load
current and 0.1
ESR
C2
.
TABLE 4-1:
OUTPUT RESISTANCE
VS. C1 (ESR = 0.1
)
TABLE 4-2:
OUTPUT VOLTAGE RIPPLE
VS. C2 (ESR = 0.1
)
I
OUT
10mA
4.4
Input Supply Bypassing
The V
IN
input should be capacitively bypassed to
reduce AC impedance and minimize noise effects due
to the internal switching of the device. The recom-
mended capacitor depends on the configuration of the
TC1221/TC1222.
4.5
Shutdown Input
The TC1221/TC1222 is enabled when SHDN is high,
and disabled when SHDN is low. This input cannot be
allowed to float. The SHDN input should be limited to
0.5V above V
IN
to avoid significant current flows.
4.6
Voltage Inverter
The most common application for charge pump
devices is the inverter (Figure 4-3). This application
uses two external capacitors: C1 and C2 (plus a power
supply bypass capacitor, if necessary). The output is
equal to -V
IN
plus any voltage drops due to loading.
Refer to Table 4-1 and Table 4-2 for capacitor
selection.
FIGURE 4-3:
VOLTAGE INVERTER
TEST CIRCUIT
C1 (
μ
F)
TC1221
R
OUT
(
)
52.9
40.8
33.5
25
TC1222
R
OUT
(
)
22.6
20.5
19.4
17.8
0.22
0.33
0.47
1.0
C2 (
μ
F)
TC1221
V
RIPPLE
(mV)
184
123
87
42
TC1222
V
RIPPLE
(mV)
32
22
16
9
0.22
0.33
0.47
1.0
3
5
2
4
1
C3
C1
C2
V
IN
V
OUT
R
L
TC1221
TC1220
C1
SHDN
IN
OUT
C1+
GND
Device
TC1221 1
μ
F 1
μ
F 1
μ
F
TC1222 0.22
μ
F 0.22
μ
F 0.22
μ
F
C1
C2
C3
6
+
+
+
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