參數(shù)資料
型號(hào)： TC1185-3.6VCT713
廠商： Microchip Technology Inc.
英文描述： 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass
中文描述： 50毫安，100 mA和一百五毫安的CMOS關(guān)機(jī)和參考繞道低壓降穩(wěn)壓器
文件頁數(shù)： 2/22頁
文件大小： 618K
代理商： TC1185-3.6VCT713
TC1014/TC1015/TC1185
DS21335E-page 2
2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
Input Voltage .........................................................6.5V
Output Voltage...........................(-0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited
(Note 7)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range......-40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
Notice:
Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications:
V
IN
= V
R
+ 1V, I
L
= 100 μA, C
L
= 1.0 μF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ
Max
Units
Device
Test Conditions
Input Operating Voltage
V
IN
2.7
—
6.0
V
—
Note 1
Maximum Output Current
I
OUT
MAX
50
100
150
—
—
—
—
—
—
mA
TC1014
TC1015
TC1185
Output Voltage
V
OUT
TCV
OUT
V
R
– 2.5%
—
—
V
R
±0.5%
20
40
V
R
+ 2.5%
—
—
V
—
Note 2
V
OUT
Temperature Coefficient
ppm/°C
—
Note 3
Line Regulation
Δ
V
OUT
/
Δ
V
IN
Δ
V
OUT
/
V
OUT
—
0.05
0c.35
%
—
(V
R
+ 1V)
≤
V
IN
≤
6V
Load Regulation
—
—
0.5
0.5
2
3
%
TC1014; TC1015
TC1185
I
L
= 0.1 mA to I
OUT
MAX
I
L
= 0.1 mA to I
OUT
MAX
(Note 4)
Dropout Voltage
V
IN
-V
OUT
—
—
—
—
—
2
65
85
180
270
—
—
120
250
400
mV
—
—
—
TC1015; TC1185
TC1185
I
L
= 100 μA
I
L
= 20 mA
I
L
= 50 mA
I
L
= 100 mA
I
L
= 150 mA
(Note 5)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
Supply Current
(Note 8)
I
IN
—
50
80
μA
—
Shutdown Supply Current
I
INSD
PSRR
—
0.05
0.5
μA
—
Power Supply Rejection
Ratio
—
64
—
dB
—
F
RE
≤
1 kHz
Output Short Circuit Current
I
OUT
SC
Δ
V
OUT
/
Δ
P
D
T
SD
—
300
450
mA
—
V
OUT
= 0V
Notes 6, 7
Thermal Regulation
—
0.04
—
V/W
—
Thermal Shutdown Die
Temperature
—
160
—
°C
—
Thermal Shutdown
Hysteresis
Δ
T
SD
—
10
—
°C
—
Note
1:
2:
3:
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
R
+ V
DROPOUT
.
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
Δ
T
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Apply for Junction Temperatures of -40°C to +85°C.
5:
6:
7:
8:
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