參數(shù)資料
型號: TC10733.0VCT713
廠商: Microchip Technology Inc.
英文描述: 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass
中文描述: 為50mA和100mA的CMOS低壓降穩(wěn)壓器具有關(guān)斷功能,錯誤輸出和VREF繞道
文件頁數(shù): 4/22頁
文件大?。?/td> 651K
代理商: TC10733.0VCT713
TC1072/TC1073
DS21354D-page 4
2007 Microchip Technology Inc.
2.0
TYPICAL CHARACTERISTICS CURVES
Note
: Unless otherwise specified, all parts are measured at temperature = +25°C.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
-40
-20
0
20
50
70
125
D
I
LOAD
= 10mA
C
IN
= 1
μ
F
C
OUT
= 1
μ
F
TEMPERATURE (
°
C)
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
0.180
0.200
-40
-20
0
20
50
70
125
D
I
LOAD
= 100mA
C
IN
= 1
μ
F
C
OUT
= 1
μ
F
TEMPERATURE (
°
C)
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
0
10
20
30
40
50
60
70
80
90
G
μ
A
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
I
LOAD
= 10mA
C
IN
= 1
μ
F
C
OUT
= 1
μ
F
Ground Current vs. V
IN
(V
OUT
= 3.3V)
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.090
0.100
-40
-20
0
20
50
70
125
D
I
LOAD
= 50mA
C
IN
= 1
μ
F
C
OUT
= 1
μ
F
TEMPERATURE (
°
C)
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
0.000
0.050
0.100
0.150
0.200
0.250
0.300
-40
-20
0
20
50
70
125
D
I
LOAD
= 150mA
C
IN
= 1
μ
F
C
OUT
= 1
μ
F
TEMPERATURE (
°
C)
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
0
10
20
30
40
50
60
70
80
90
G
μ
A
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
I
LOAD
= 100mA
C
IN
= 1
μ
F
C
OUT
= 1
μ
F
Ground Current vs. V
IN
(V
OUT
= 3.3V)
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