
TC1015
2
100mA CMOS LDO WITH SHUTDOWN
AND REFERENCE BYPASS
PRELIMINARY INFORMATION
TC1015-01-6/5/97
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .................................................................7V
Output Voltage .................................. (– 0.3) to (V
IN
+ 0.3)
Power Dissipation ....................Internally Limited (Note 7)
Operating Temperature.................... – 40
°
C < T
J
< 125
°
C
Storage Temperature ............................– 65
°
C to +150
°
C
Maximum Voltage On Any Pin .......... V
IN
+ 0.3V to – 0.3V
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS:
V
IN
= V
OUT
+ 1V, I
L
= 100
μ
A, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= 25
°
C, unless otherwise noted.
Boldface
type specifications apply for junction temperatures of – 40
°
C to +125
°
C.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
IN
I
OUTMAX
V
OUT
TCV
OUT
Input Operating Voltage
Maximum Output Current
Output Voltage
V
OUT
Temperature Coefficient
—
100
—
—
6.5
—
V
mA
V
Note 1
Note 2
V
R
– 2.5%
V
R
±
0.5%
20
40
0.01
0.5
V
R
+ 2.5%
—
ppm/
°
C
V
OUT
/
V
IN
V
OUT
/V
OUT
Line Regulation
Load Regulation
(V
R
+ 1V) < V
IN
< 6V
I
L
= 1.0mA to I
OUTMAX
(Note 3)
I
L
= 0.1mA
I
L
= 20mA
I
L
= 50mA
I
L
=100mA
(Note 4)
I
L
= I
OUTMAX,
(Note 5)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
F
RE
≤
1kHz
V
OUT
= 0V
Note 6
I
L
= I
OUTMAX
470pF from Bypass to GND
—
—
—
—
%
%
V
IN
– V
OUT
Dropout Voltage (Note 4)
—
20
70
93
112
—
mV
I
GND
I
IN
I
INSD
PSRR
I
OUTSC
V
OUT
/
P
D
eN
Ground Pin Current
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
—
—
—
—
—
—
—
—
50
—
64
300
0.04
260
0
—
0.05
—
500
—
—
μ
A
μ
A
μ
A
dB
mA
%/W
nV/
√
Hz
SHDN Input
V
IH
V
IL
NOTES:
1. V
R
is the regulator output voltage setting. V
R
= 2.5V, 2.7V, 3.0V, 3.3V, 5.0V.
2. TCV
OUT
= (V
OUTMAX
–
V
OUTMIN
)
x 10
6
V
OUT
x
T
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load
range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the
thermal regulation specification.
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load
current, ground current and supply current (i.e. I
IN
= I
SUPPLY
+ I
GND
+ I
LOAD
).
6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10msec.
7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Thermal Considerationssection of this data sheet for more details.
.
SHDN Input High Threshold
SHDN Input Low Threshold
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
45
—
—
—
—
15
%V
IN
%V
IN