參數(shù)資料
型號： TC0205AD
廠商： Vishay Intertechnology,Inc.
英文描述： Dual N- and P-Channel ±20-V Low-Threshold MOSFET(漏源電壓±20V的雙N溝道/P溝道低閾值MOSFET)
中文描述： 雙N和P通道± 20 - V低閾值MOSFET的（漏源電壓± 20V的的雙?溝道/頁溝道低閾值MOSFET的）
文件頁數(shù)： 2/6頁
文件大?。?/td> 51K
代理商： TC0205AD
TC0205AD
Vishay Siliconix
New Product
www.siliconix.com FaxBack 408-970-5600
2
Document Number: 70882
S-58611—Rev. A, 19-Jul-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
V
GS
= 0 V, I
D
= –10 A
V
DS
= V
GS
, I
D
= 50 A
V
DS
= V
GS
, I
D
= –50 A
N-Ch
20
24
P-Ch
–20
–24
V
Gate Threshold Voltage
V
GS(th)
N-Ch
0.4
0.9
1.5
P-Ch
–0.4
–0.9
–1.5
Gate-Body Leakage
I
GSS
= 0 V V
V
DS
= 0 V, V
GS
=
8 V
N-Ch
2
100
P-Ch
2
100
nA
V
DS
= 20 V, V
GS
= 0 V
V
DS
= –20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
V
DS
= –20 V, V
GS
= 0 V, T
J
= 55 C
V
DS
2.5 V, V
GS
= 5.0 V
V
DS
–2.5 V, V
GS
= –5.0 V
V
DS
4.5 V, V
GS
= 8.0 V
V
DS
–4.5 V, V
GS
= –8.0 V
V
GS
= 2.5 V, I
D
= 150 mA
V
GS
= –2.5 V, I
D
= –75 mA
V
GS
= 4.5 V, I
D
= 250 mA
V
GS
= –4.5 V, I
D
= –180 mA
V
DS
= 2.5 V, I
D
= 50 mA
V
DS
= –2.5 V, I
D
= – 50 mA
I
S
= 50 mA, V
GS
= 0 V
I
S
= –50 mA, V
GS
= 0 V
N-Ch
0.001
100
Zero Gate Voltage Drain Current
I
DSS
P-Ch
–0.001
–100
N-Ch
1
A
P-Ch
–1
N-Ch
120
On-State Drain Current
b
I
D(on)
P-Ch
–120
mA
N-Ch
400
P-Ch
–400
N-Ch
1.6
2.5
Drain-Source On-State Resistance
b
r
DS(on)
P-Ch
4
5
N-Ch
1.2
2.0
P-Ch
2.6
3.8
Forward Transconductance
b
g
fs
N-Ch
150
mS
P-Ch
200
Diode Forward Voltage
b
V
SD
N-Ch
0.7
1.2
V
P-Ch
–0.7
–1.2
Dynamic
a
Total Gate Charge
Q
g
N-Ch
300
450
N-Channel
P-Ch
300
450
Gate-Source Charge
Q
gs
V
DS
= 5 V,
V
GS
= 4.5 V, I
D
= 100 mA
N-Ch
25
pC
P-Channel
V
DS
= –5 V V
V
GS
= –4.5 V, I
D
= –100 mA
4 5 V I
P-Ch
25
Gate-Drain Charge
Q
gd
N-Ch
100
P-Ch
100
Input Capacitance
In ut Ca acitance
C
iss
N-Ch
15
N-Channel
V
DS
= 5 V, V
GS
= 0 V
P-Ch
15
Output Capacitance
Out ut Ca acitance
C
oss
N-Ch
11
pF
P-Channel
5 V V
V
DS
= –5 V, V
GS
= 0 V
P-Ch
11
Reverse Transfer Capacitance
Reverse Transfer Ca acitance
C
rss
N-Ch
5
P-Ch
5
Switching
Turn-On Time
t
d(on)
N-Ch
7
12
N Channel
N-Channel
P-Ch
7
12
Rise Time
t
r
V
= 3 V, R
= 100
0.25 A, V
GEN
= 4.5 V, R
G
= 10
N-Ch
25
35
I
D
P-Ch
25
35
ns
Turn-Off Delay Time
t
d(off)
P-Channel
3 V R
V
= –3 V, R
= 100
= –4.5 V, R
0.25 A, V
GEN
= 4.5 V, R
G
= 10
N-Ch
19
30
I
D
P-Ch
19
30
Fall Time
t
f
N-Ch
9
15
P-Ch
9
15
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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