參數(shù)資料
型號(hào): TB62709
廠商: Toshiba Corporation
英文描述: TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic
中文描述: 東芝的Bi - CMOS硅單片集成電路
文件頁(yè)數(shù): 3/25頁(yè)
文件大?。?/td> 648K
代理商: TB62709
586
120 Broadway Menands, New York 12204
Toll Free:
(800) 98-4LEDS
Fax: (518) 432-7454
marktech
optoelectronics
TOSHIBA Bi-CMOS Integrated
Circuit Silicon Monolithic
TB62709N/F
Recommended Operating Conditions:
For up-to-date product info visit our web site at www.marktechopto.com All specifications subject to change.
CHARACTERISTICS
SYMBOL
TEST
CIRCUIT
CONDITION
MIN.
TYP.
MAX.
UNIT
Output Stage
Supply Current
ICC1
1
Set normal operation mode,
Rext=760
,
Out a~DP, all
ON VCC = 5V, Ta=25°C
300
mA
ICC2
1
Set normal operation mode,
Rext=760
,
Out a~DP, all
ON VCC = 5V, Ta=25°C
320
mA
Digit 0~3 Scanning Freq.
fOSC
2
Normal operation mode,
VDD=4.5 - 5.5V
240
480
960
Hz
Out a~DP Output Current
ISEG
3
Normal operation mode,
VDD=4.5 - 5.5V
29
34
40
mA
Digit 0~3 Leakage Current
ILEAK1
4
All off mode, VCC=17V
-20
μA
Out a~DP Leakage Current
ILEAK2
4
All off mode, VCC=17V
20
μA
Digit 0~3 Output Voltage
VOUT
5
Normal operation mode
IDIG = 320mA
3.0
V
Logic
Supply Current
IDD1
6
Standby Mode, Ta=25°C
200
μA
IDD2
6
Blank Mode, Ta=25°C
12.5
mA
Operating Supply Current
IDD3
6
Normal operating mode
fCLK=10MHz, Ta=25°C
Data-in:output a~DP on
20.5
mA
High Level Input Current
IIH
Data-in, Load&Clock VIN=5V
1
μA
Low Level Output Current
IIL
Data-in, Load&Clock VIN=0V
-1
μA
High Level Output Voltage
VOH1
6
Data out, IOH=-1mA
4.6
V
VOH2
6
Data-out, IOH=-1μA
VDD
V
Low Level Output Voltage
VOL1
6
Data out, IOH=-1mA
0.4
V
VOL2
6
Data-out, IOH=-1μA
0.1
V
Clock Frequency
FCLK
6
CASCADE connected,
TA = -40 ~ 85oC
10
MHz
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